Abstract:In this article, a device called GaAs/InAs/Ge junctionless tunnel field-effect transistor (JL-TFET) is proposed and investigated by a numerical simulator. This device utilizes an InAs pocket at the source side and its digital performance parameters such as subthreshold slope (SS) and ON-state current to OFF-state current ( ${I}_{ON}/{I}_{OFF}$ ) ratio have been improved in comparison with GaAs/Ge JL-TFET. Simulation results show that the electron tunneling mechanism is based on intraband tunneling and interband tunneling in GaAs/InAs/Ge JL-TFET, while the electron tunneling mechanism is interband tunneling in regular JL-TFET. To further reduce SS, we have proposed for the first time GaAs/InAs/Ge JL-TFET structure with a fixed gate (f-gate), the so-called dual-material gate (DMG) GaAs/InAs/Ge JL-TFET. The f-gate induces a local dip in the conduction band edge leading to more abrupt band bending at the vicinity of the InAs/GaAs interface. Simulation results show that DMG GaAs/InAs/Ge JL-TFET is turned on at lower ${V}_{text {GS}}$ compared to GaAs/InAs/Ge JL-TFET, causing a SS is improved. A brief examination of the proposed device has been done on the impacts of both the variations of the f-gate work-function ( $phi _{text {F}}$ ) and the f-gate length ( $text {L}_{text {f-gate}}$ ). The DMG GaAs/InAs/Ge JL-TFET with a channel length of 20 nm, $phi _{text {F}} = 3.7$ eV, and $text {L}_{text {f-gate}} = {5}$ nm showed the average SS of SS = 2.1 mV/dec, and ON-state current of ${I}_{ON} = {0.51}$ mA/ $mu {mathrm{ m}}$ . The SS and ${I}_{ON}$ of the DMG GaAs/InAs/Ge device are improved by 150% and 76%, respectively, compared to the GaAs/Ge JL-TFET device with similar dimensions. The DMG GaAs/InAs/Ge JL-TFET device proposed in this article can be a reasonable candidate for digital applications.

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