Abstract:In this paper, an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As heterojunction dopingless tunnel field-effect transistor (HDL-TFET) with an HfO 2 /SiO 2 heterogate dielectric is proposed, where the N + -pocket with variable electron concentration can be formed by adjusting the length of source-side channel (L SC ) based on the charge plasma concept, instead of employing conventional ion implantation or dual-material gate techniques. It aims to improve the device performance and simplify the device fabrication. At the drain bias of 0.3 V, numerical simulations show that the on-state current (I ON ) of the HDL-TFET with L SC = 4 nm can approach ~10 −5 A/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> that is far higher than that of the Si-DL-TFET (~10 −10 A/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> ), and the average subthreshold swing (SS avg ) can approach 36.6 mV/decade that is significantly lower than that of the Si-DL-TFET (89.2 mV/decade). It is also found that the drain-induced barrier lowering (DIBL) effect and the ambipolar current can be effectively suppressed in the HDL-TFET because of an existence of heterojunction. Under the condition of low gate and drain biases, the HDL-TFET exhibits peak values of the cutoff frequency (f T ) and the maximum oscillation frequency (f max ) approaching 13 and 4.73 GHz, respectively, while the Si-DL-TFET yields those of 8.05 and 2.26 GHz, respectively, under relatively higher biases. It indicates that the HDL-TFET is a promising device for low-power consumption radio frequency applications.

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