InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

H. Zhao,Y. Chen,Y. Wang,F. Zhou,F. Xue,J. Lee

DOI: https://doi.org/10.1109/ted.2011.2159385

IF: 3.1

2011-09-01

IEEE Transactions on Electron Devices

Abstract:$\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ tunneling field-effect-transistors (TFETs) using the $\hbox{p}^{+}$ (6 nm)/undoped (6 nm) tunneling junction with 5-nm $\hbox{HfO}_{2}$ gate oxides have been demonstrated with an on-current of 50 $\mu\hbox{A}/\mu\hbox{m}$ and a minimum subthreshold swing (SS) of 86 mV/dec. The impacts of tunneling junction structures on TFETs' performance have been investigated. It has been found that $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ TFETs with the $\hbox{p}^{+}$ (4 nm)/undoped (8 nm) tunneling junction provide $\sim$80% higher on -currents than $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ TFETs with the $\hbox{p}^{+}$ (6 nm)/undoped (6 nm) junction, and $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ TFETs exhibit much higher on-currents than $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ TFETs. Different atomic-layer-deposited gate oxides have been used, and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{HfO}_{2}$ bilayer gate oxides effectively improve the SS compared with $\hbox{HfO}_{2}$ single gate oxide. The effects of equivalent oxide thickness scaling and operating temperatures on the on-current, the SS, and the gate-bias-dependent Esaki diode behavior have been also investigated.

engineering, electrical & electronic,physics, applied