Abstract:Influence of dipolar alignments of a ferroelectric poly-vinylidine fluoride trifluroethylene [P(VDF-TrFE)] thin film on the charge mobility and nonvolatile property of ferroelectric field-effect transistors (FeFETs) has been explored. The electrical properties of the ferroelectric microstructures can be tuned by adopting different cooling procedures after annealing the spin-coated ferroelectric polymer P(VDF-TrFE) substrates. For example, a higher degree of alignment of the C–F dipoles in the polymeric chains is observed along the substrate surface for the samples with fast quenching. The dielectric constant of the fast-quenched sample is found to be ∼10 at 1 kHz, while the same is found to be ∼8.5 when the rate of cooling is relatively slower. Furthermore, the fabrication of a metal–insulator–metal capacitor using the fast-quenched substrate leads to a high remnant polarization of Pr ∼ 5.5 ± 0.2 μC/cm2, as compared to that of the normally cooled sample to ∼2.7 ± 0.2 μC/cm2, at an applied field intensity of 200 MV/m. Emergence of such characteristics encouraged the use of P(VDF-TrFE) as a gate dielectric layer, which leads to improved nonvolatile characteristics of the device. The measured charge carrier mobility of FeFETs embedded with a fast-quenched ferroelectric polymer as a gate dielectric is found to be ∼3.4 × 10–2 cm2 V–1 s–1, which is ∼35% higher than the normally cooled samples. The strongly correlated C–F dipoles in the fast-quenched ferroelectric layers lead to the reduction in width of the trap density of states near the semiconductor–dielectric interface. The XPS and UPS characterizations show the formation of a superior transport channel in the semiconductor near its dielectric interface when the fast-quenched polymer is used as the gate dielectric in the FeFETs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00549?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00549</a>.FESEM surface image of normally cooled and fast-quenched ferroelectric polymer thin films; AFM topographic image of CuPc nanoparticles on the Si substrate; band alignment study at the semiconductor–dielectric interface; and P(VDF-TrFE) film vibrational absorbance bands (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00549/suppl_file/el0c00549_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Recessed Channel Ferroelectric-Gate Field-Effect Transistor Memory With Ferroelectric Layer Between Dual Metal Gates

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Ferroelectric-field-effect-enhanced Electroresistance in Metal/ferroelectric/semiconductor Tunnel Junctions

Design Points of InGaAs MFMIS Tunnel FET for Large Memory Window and Stable Ferroelectric Memory Operation

Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Dipolar Alignment in a Ferroelectric Dielectric Layer of FeFETs to Boost Charge Mobility and Nonvolatile Memory

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor

Logic Compatible High-Performance Ferroelectric Transistor Memory