Oxidation behavior of dense SiOC monolithics: The oxide scale development

Min Niu,Zihao Zhao,Lei Su,Hongfei Gao,Zhixin Cai,Hongjie Wang
DOI: https://doi.org/10.1016/j.corsci.2019.108235
IF: 7.72
2020-01-01
Corrosion Science
Abstract:Forming stable and continuous oxide scale is the key to resist oxidation by acting as a surface-diffusion barrier to reduce further oxygen attack. Oxidation behavior of dense SiOC monolithics was studied from 900 degrees C to 1200 degrees C for up to 18 h. The oxide scale formed at 1000 degrees C and 1200 degrees C was similar to 106 mu m and similar to 81 mu m in thickness, respectively. High thermal misfit strain induced by the large thickness and volume shrinkage originated from crystallization of silica resulted in the scale cracking with oxidation time. However, the scale formed at 1100 degrees C remained dense and thin (similar to 43 mu m) without any visible defects, protecting the SiOC base effectively.
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