Growth Behavior and Orientation Evolution of Cu6Sn5 Grains in Micro Interconnect During Isothermal Reflow

S. Chen,N. Zhao,Y.Y. Qiao,Y.P. Wang,H.T. Ma,C.M.L. Wu

DOI: https://doi.org/10.1109/ECTC.2019.00250

2019-01-01

Abstract:At present, three-dimensional (3D) packaging technology is one of the effective methods to extend Moore's law. In 3D stacking, micro interconnects (below 30 mu m) have been widely used. As for Cu/Sn/Cu micro interconnect, after repeated or long-term reflow, the micro interconnect will be mainly composed by Cu-Sn intermetallic compounds (IMCs) because of the small bonding gap and fast IMC growth rate under size effect. In the present research, a Cu/Sn(12.5 mu m)/Cu micro interconnect was reflowed at 260 degrees C. Laminar scallop-like Cu6Sn5 IMC was the dominant produce at both interfaces. The total thickness of the two Cu6Sn5 layers and the consumption of the bottom Cu layer both showed a parabolic law with reflow time, and their logarithmic format followed a good linear relationship. It is also found that as the reaction time extended, the number of the Cu6Sn5 grains decreased and the grain orientation tended to gathering towards certain directions, resulting in texture structure. The angle between the < 0001 > direction of the Cu6Sn5 grains and the growth direction of IMC (perpendicular to the interface) was analyzed to characterize the grain orientation evolution. The anisotropic growth of the Cu6Sn5 grains along the < 0001 > direction was discussed to reveal the mechanism of orientation evolution.