A Sandwich-Structured AlGaN/GaN HEMT with Broad Transconductance and High Breakdown Voltage

Dingbo Chen,Zhikun Liu,Jinghan Liang,Lijun Wan,Zhuoliang Xie,Guoqiang li

DOI: https://doi.org/10.1039/c9tc03718g

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

What problem does this paper attempt to address?

High Breakdown Voltage AlGaN/GaN HEMTs with a Dipole Layer for Microwave Power Applications

Jiangfeng Du,Xiaoyun Li,Zhiyuan Bai,Yong Liu,Qi Yu

DOI: https://doi.org/10.1049/mnl.2018.5556

2019-01-01

Micro & Nano Letters

Abstract:A novel high breakdown voltage AlGaN/GaN high electron mobility transistor with a dipole layer (GaN DL-HEMT) is proposed in this work. The dipole layer (DL) is formed by AlGaN which is attached to the AlGaN barrier and located in the passivation layer between drain and gate electrodes. DL can improve significantly the breakdown voltage (BV) by modulating the distribution of electric field along the channel. The proposed GaN DL-HEMT exhibits a high BV of 1130 V, which increased from 496 V of conventional GaN HEMT with gate-drain distance of 5 μm, while on-state resistance keeps 0.48 Ω.mm and FOM at a high level of 2.67 GW/cm 2 is obtained. Meanwhile, the cutoff frequency maintains a large value as high as 32.4 GHz, which increases by 74% compared with GaN with a gate field plate. The novel GaN DL-HEMT shows great prospects in microwave power applications.
High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Zhihua Dong,Jinyan Wang,C. P. Wen,Danian Gong,Ying Li,Min Yu,Yilong Hao,Fujun Xu,Bo Shen,Yangyuan Wang

DOI: https://doi.org/10.1016/j.sse.2010.06.001

IF: 1.916

2010-01-01

Solid-State Electronics

Abstract:Direct oxidation of composite Ni/Ti metal film structure for AlGaN/GaN MOSHEMT has been successfully demonstrated. In comparison with normal HEMT with Schottky-gate, transistors fabricated with this novel process exhibit three orders of magnitude reduction in gate leakage current, superior breakdown voltage (Vbr=471V vs. 88V for normal HEMT) and electrical stability (∼0.3% electric field stress induced drain current degradation versus ∼6% for normal HEMT after 25V drain bias). The drastic improvement in device performance stability, renders the new process highly promising for GaN based, microwave power amplifier applications in communication and radar systems.
Research Progress on AlGaN/GaN-based HEMT

邵庆辉,李蓓,叶志镇

DOI: https://doi.org/10.3969/j.issn.1671-4776.2003.02.003

2003-01-01

Abstract:The AlGaN high electron mobility transistor is currently the most suitable for high power amplification at microwave frequencies, due to its high breakdown field (3 MV/cm which is 7.5 times that of GaAs) and its enormous polarization induced 2DEG at the AlGaN/GaN heterojunction. In this paper, material structure and device processing issues related to the performance of high-frequency and high-power AlGaN/GaN are discussed.
Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Xiaoyu Xia,Zhiyou Guo,Huiqing Sun

DOI: https://doi.org/10.3390/mi12111318

IF: 3.4

2021-10-27

Micromachines

Abstract:In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 Ω mm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Xinke Liu,Hong Gu,Kuilong Li,Lunchun Guo,Deliang Zhu,Youming Lu,Jianfeng Wang,Hao-Chung Kuo,Zhihong Liu,Wenjun Liu,Lin Chen,Jianping Fang,Kah-Wee Ang,Ke Xu,Jin-Ping Ao

DOI: https://doi.org/10.1063/1.4999810

IF: 1.697

2017-01-01

AIP Advances

Abstract:This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.
Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage

Bonghwan Kim,Seung-Hwan Park

DOI: https://doi.org/10.3390/ma17225560

IF: 3.4

2024-11-18

Materials

Abstract:This study investigates the effects of incorporating a CdZnO layer in place of the conventional InGaN layer in an AlGaN/InGaN/GaN/AlGaN/SiC high-electron mobility transistor (HEMT) structure. We examine the resulting characteristics and assess the potential of high-power HEMT applications, including high-power switching converters, through simulation analysis. Both structures demonstrate increased drain current and transconductance with increasing Al content in the barrier layer. However, HEMTs with a CdZnO layer exhibit higher drain current compared to those with an InGaN layer at the same Al content. The breakdown voltage decreases rapidly with increasing Al content, attributed to changes in electric field distribution. HEMTs with a CdZnO/GaN channel exhibit a slightly higher breakdown voltage (~795 V) compared to those with an InGaN/GaN channel (~768 V) at a lower Al content of x = 0.10. These results suggest that CdZnO-based HEMTs have significant potential for high-power, high-frequency applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Krishna Sai Sriramadasu,Yue-Ming Hsin,Yue-ming Hsin

DOI: https://doi.org/10.1149/2162-8777/ad1f93

IF: 2.2

2024-01-18

ECS Journal of Solid State Science and Technology

Abstract:This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode. This innovation significantly enhances the HEMT's performance, with a 45.2% increase in breakdown voltage (BV) and a 17% higher threshold voltage (VTH) compared to conventional p-GaN gate HEMTs. The extended gate design redistributes the electric field, acting as a field plate to elevate the breakdown voltage. Furthermore, the proposed device, by reducing 17.4% of the saturation current without increasing the on-resistance, possibly offers improved short-circuit capability.

materials science, multidisciplinary,physics, applied
An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

Xie Gang,Tang Cen,Wang Tao,Guo Qing,Zhang Bo,Sheng Kuang,Wai Tung Ng

DOI: https://doi.org/10.1088/1674-1056/22/2/026103

2013-01-01

Abstract:An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with a conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at VGS = −5 V. In contrast, a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without a field plate (no FP) and with an optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of −0.113 V/K and −0.065 V/K, respectively.
A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Jingwei Guo,Shengdong Hu,Ping Li,Jie Jiang,Ruoyu Wang,Yuan Wang,Hao Wu

DOI: https://doi.org/10.3390/mi13030464

IF: 3.4

2022-03-18

Micromachines

Abstract:In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces a high electric field from the vertical field plate into the internal buffer region of the device. The compound buffer layer can significantly increase the breakdown performance without sacrificing any dynamic characteristics and increasing the difficulty in the fabrication process. The significant structural parameters are optimized and analyzed. The simulation results reveal that the proposed HEMT with a 6 μm gate-drain distance shows an OFF-state breakdown voltage (BV) of 881 V and a specific ON-state resistance (Ron,sp) of 3.27 mΩ·cm2. When compared with the conventional field plate HEMT and drain connected field plate HEMT, the breakdown voltage could be increased by 148% and 94%, respectively.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

M. Kuraguchi,W. Saito,H. Ohashi,I. Omura,K. Tsuda,T. Ogura,Y. Takada

DOI: https://doi.org/10.1109/TED.2003.819248

2003-12-01

Abstract:AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage are fabricated and demonstrated as switching power devices for motor drive and power supply applications. The fabricated power HEMT realized the high breakdown voltage by optimized field plate technique and the low on-state resistance of 3.3 m/spl Omega/cm/sup 2/, which is 20 times lower than that or silicon MOSFETs, thanks to the high critical field of GaN material and the high mobility in 2DEG channel. The fabricated devices also demonstrated the high current density switching of 850 A/cm/sup 2/ turn-off. These results show that AlGaN-GaN power-HEMTs are one of the most promising candidates for future switching power device for power electronics applications.

Materials Science,Engineering,Physics
A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Bin Zhou,Jinyan Wang,Di Meng,Shuxun Lin,Min Fang,Zhihua Dong,Min Yu,Yi Long Hao,Cheng Wen

DOI: https://doi.org/10.1088/0256-307X/28/10/107303

2011-01-01

Chinese Physics Letters

Abstract:Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (V-br = 490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Bosen Liu,Guohao Yu,Huimin Jia,Jingyuan Zhu,Jiaan Zhou,Yu Li,Bingliang Zhang,Zhongkai Du,Bohan Guo,Lu Wang,Qizhi Huang,Leifeng Jiang,Zhongming Zeng,Zhipeng Wei,Baoshun Zhang

DOI: https://doi.org/10.1088/1674-4926/24010025

2024-01-01

Journal of Semiconductors

Abstract:In this paper,we explore the electrical characteristics of high-electron-mobility transistors (HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor (MIS) structure. The high-resistance tantalum nitride (TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface,and reducing the gate leakage current of the MIS HEMT,its performance was enhanced. The HEMT exhib-ited a low gate leakage current of 2.15 × 10-7 mA/mm and a breakdown voltage of 1180 V. Furthermore,the MIS HEMT dis-played exceptional operational stability during dynamic tests,with dynamic resistance remaining only 1.39 times even under 400 V stress.
Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Hao Wu,Xiaojun Fu,Yuan Wang,Jingwei Guo,Jingyu Shen,Shengdong Hu

DOI: https://doi.org/10.1016/j.rinp.2021.104768

IF: 4.565

2021-10-01

Results in Physics

Abstract:A research on breakdown voltage improvement of the enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) has been carried out. A novel step-etched GaN buffer structure combined with a thin GaN buffer is studied by simulating. Both the thin GaN buffer and the step-etched GaN structure can improve the breakdown voltage. The thin GaN buffer can reduce the conductivity as well as alleviate the vertical electric field. And the step-etched GaN structure can form two electric field peaks and thus decrease the original one. With the same gate-drain length of 7 μm, the optimized structure increases the breakdown voltage from 316 V to 1487 V, and the specific on-state resistance is obtained to be 2.718 mΩ•cm2 which is the similar to conventional GaN HEMT, and the calculated FOM is improved by more than 20 times. These results indicate that the novel step-etched GaN buffer structure can improve the breakdown voltage without compromising the output characteristics.

physics, multidisciplinary,materials science
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Shunwei Zhu,Hujun Jia,Tao Li,Yibo Tong,Yuan Liang,Xingyu Wang,Tonghui Zeng,Yintang Yang

DOI: https://doi.org/10.3390/mi10070444

2019-07-02

Abstract:A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS) simulations. The gate of the new structure is 5 nm higher than the barrier layer, and the buffer layer has two recessed regions in the buffer layer. The TCAD simulation results show that the maximum drain saturation current and transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The new structure has a better gain than the conventional HEMT. In radio frequency (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, which ensures a large output power density. Overall, the results show that the HGMRB HEMT is a better prospect for high energy efficiency than the conventional HEMT.
Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Le Trung Hieu,Shivendra Rathaur,Chee-How Lu,You-Chen Weng,Yuan Lin,Chun-Hsiung Lin,Quark Yungsung Chen,Edward Yi Chang

DOI: https://doi.org/10.1088/1361-6641/ad57e6

IF: 2.048

2024-06-14

Semiconductor Science and Technology

Abstract:In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal-organic chemical vapor deposition (MOCVD) was investigated by utilizing the both AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. Atomic force microscope (AFM) and high-resolution x-ray diffractometer (HR-XRD) confirm low surface roughness of 0.26 – 0.34 nm and the formation of high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit high electron mobility of up to 1700 cm2/V∙s and high carrier concentration density of (1.02 – 1.06 × 1013 cm-2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate low specific contact resistivity (c) of 2.7 × 10-6 Ω·cm2 and low contact resistance (RC) of 0.3 Ω·mm for the heterostructure with BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 μm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA/cm2), compared to the heterostructure without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, improvement of 10.6% in maximum saturation current (IDS) and 15.2% in on-resistance (RON)has been for the device fabricated on Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to –1.40 dB/mm at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage

Soumak Nandi,Shashank Kumar Dubey,Mukesh Kumar,Aminul Islam

DOI: https://doi.org/10.1007/s00542-024-05609-y

2024-02-17

Microsystem Technologies

Abstract:In this work, we propose a novel triple field-plated high-electron-mobility-transistor (HEMT) for high power applications, achieving a breakdown voltage of 2449 V. Unique structural topology, layer selection and material selection allow us to achieve the acclaimed breakdown voltage, superseding existing devices. The structure is such that fabrication techniques required to synthesize the proposed device are simple, relative to recently proposed high-power HEMTs with comparable breakdown voltage. A model estimating electric flux, conduction current and potential distribution within the proposed device has been put forward using the 2D Laplace/Poisson field distribution system. The proposed 2D models exhibit less than 1% deviation from the simulated electric flux and conduction current maps. These proposed models can potentially aid in estimating the breakdown voltage, device current, electric field and electric potential of a HEMT device from its structural characteristics and biasing alone without the need for resource-intensive simulation work.

engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

Jun-Ho Lee,Jun-Hyeok Choi,Woo-Seok Kang,Dohyung Kim,Byoung-Gue Min,Dong Min Kang,Jung Han Choi,Hyun-Seok Kim

DOI: https://doi.org/10.3390/mi13111957

2022-11-11

Abstract:This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage. Prior to the analysis of slant-gate-based HEMT, simulation parameters were extracted from the measured data of fabricated basic T-gate HEMTs to secure the reliability of the results. We suggest three different types of slant-gate structures that connect the basic T-gate electrode boundary to the 1st and 2nd SiN passivation layers obliquely. To consider both the breakdown voltage and frequency characteristics, the DC and RF characteristics of various slant-gate structures including the self-heating effect were analyzed by TCAD simulation. We then applied a drain-side extended FP to further increase the breakdown voltage. The maximum breakdown voltage was achieved at the FP length of 0.4 μm. Finally, we conclude that the slant-gate structures can improve breakdown voltage by up to 66% without compromising the frequency characteristics of the HEMT. When the drain-side FP is applied to a slant-gate structure, the breakdown voltage is further improved by up to 108%, but the frequency characteristics deteriorate. Therefore, AlGaN/GaN HEMTs with an optimized slant-gate-based structure can ultimately be a promising candidate for high-power and high-frequency applications.
Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Zehui Peng,Huangbai Liu,Hao Yu,Lei Li,Kuan-Chang Chang

DOI: https://doi.org/10.1039/d4ra03508a

2024-07-15

Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) play an important role in the field of high-voltage and high-frequency power devices. However, the current collapse effect of the HEMTs under high voltage greatly limits the development of AlGaN/GaN HEMTs. In this work, a breakdown performance enhanced drain surrounded double gate (DSDG) AlGaN/GaN HEMT is investigated. This structure has two separate gates located on the right and the left of the drain. The optimized off-state characteristics are analyzed by the Sentaurus TCAD simulation tool. The additional gate contributes to restraining the movement of electrons injected by the source therefore reducing the source-to-drain punch-through current. Moreover, the energy band pulled up by the relatively low voltage of the right gate helps to alleviate the drain induced barrier lower (DIBL) effect. As a result, DSDG-HEMT could postpone the breakdown by approximately 100 V through suppressing buffer leakage.
A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application

Ninggang Dong,Meihua Liu,Limeng Shi,Xinnan Lin

DOI: https://doi.org/10.1109/edssc.2018.8487132

2018-01-01

Abstract:In this paper, a novel normally-off p-GaN gate AlGaN/GaN HEMT on AlGaN buffer with an InGaN layer inserted between GaN channel and AlGaN buffer is proposed and investigated by Sentaurus TCAD simulation tool. A higher drain current (lower R on ) in the on-state and higher breakdown voltage (V Br ) are achieved simultaneously. The V Br 2 /R on is increased by 34.8%.
Fabrication of AlGaN/GaN High-Electron-mobility Transistors

T Wu,ZB Hao,WP Guo,SW Wu,Y Luo,QM Zeng,XJ Li

DOI: https://doi.org/10.1117/12.481021

2002-01-01

Abstract:In this paper, the growth and device fabrication of AIGaN/GaN HEMTs are investigated by using Metal-Organic Vapor Phase Epi taxy (MOVPE) system. The grown wafer consists of a 3-μm-thick unintentionally doped GaN buffer layer, an undoped AIGaN spacer layer, and a n-doped Al0.28Ga0.72N cap layer. The growth condition and the wafer structure are optimized for high performance devices. The devices exhibit a maximum saturation current density of 1000 mA/mm, good pinch off at -5V gate bias and a peak extrinsic transconductance of 180 mS/mm. Further efforts to improve the device performance are also discussed.

A Sandwich-Structured AlGaN/GaN HEMT with Broad Transconductance and High Breakdown Voltage

High Breakdown Voltage AlGaN/GaN HEMTs with a Dipole Layer for Microwave Power Applications

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Research Progress on AlGaN/GaN-based HEMT

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

An Algan/Gan Hemt with Enhanced Breakdown and A Near-Zero Breakdown Voltage Temperature Coefficient

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application

Fabrication of AlGaN/GaN High-Electron-mobility Transistors