Abstract:It is an importance to understand the contact mechanism at interfaces between dielectric and channel materials to improve the performance of thin film transistors. Oxide semiconductor has proposed as promising candidate for transparent flexible application, whose development requires greater understand and control of their electron contacts. The performance of IGZO/SiOC TFTs depended on properties of SiOC as a gate insulator. SiOC exhibited a range of systematic interface electronic structure that can be understood at the atomic scale to provide a comprehensive feature of Schottky barrier and Ohmic contacts. The conduction of TFTs prepared on low polar SiOC was progressed by the tunneling behavior. The ambipolar transfer characteristics in tunneling transistors were done by a spontaneous potential barrier of SiOC such as the Schottky barrier (SB) in a short range and Ohmic contact in a long range. TFTs on SiOC with Poole-Frenkel contact as high SB operated under the threshold voltage, and then became free from the threshold voltage shift. However, the TFTs on high polar SiOC with Ohmic contact in a short range was also showed the unipolar characteristics by the trapping behavior as well as instability owing to the operation at high drain bias voltage over the threshold voltage.

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Tunneling Contact Igzo Tfts With Reduced Saturation Voltages

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Current Enhancement of Graphene-Inserted Tunneling Contact IGZO TFT

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Low Frequency Noise of the Tunneling Contact Thin-Film Transistors

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Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin-Film Transistors

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel