Abstract:We propose a novel high performance carrier stored trench bipolar transistor (CSTBT) with dual shielding structure (DSS-CSTBT). The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface, in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under it. Compared with the conventional CSTBT (con-CSTBT), the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage (BV), but also well reduces the gate-collector capacitance C GC, gate charge Q G, and turn-off loss E OFF of the device. Furthermore, lower turn-on loss E ON and gate drive loss E DR are also obtained. Simulation results show that with the same CS layer doping concentration N CS = 1.5 × 1016 cm−3, the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate (T og2) of 1 μm. Moreover, compared with the con-CSTBT, the C GC at V CE of 25 V and miller plateau charge (Q GC) for the proposed DSS-CSTBT with T og2 of 1 μm are reduced by 79.4% and 74.3%, respectively. With the V GE increases from 0 V to 15 V, the total Q G for the proposed DSS-CSTBT with T og2 of 1 μm is reduced by 49.5%. As a result, at the same on-state voltage drop (V CEON) of 1.55 V, the E ON and E OFF are reduced from 20.3 mJ/cm2 and 19.3 mJ/cm2 for the con-CSTBT to 8.2 mJ/cm2 and 9.7 mJ/cm2 for the proposed DSS-CSTBT with T og2 of 1 μm, respectively. The proposed DSS-CSTBT not only significantly improves the trade-off relationship between the V CEON and E OFF but also greatly reduces the E ON.

Numerical Analysis of Impact of Shield Gate on Trench IGBT and CSTBT

Analysis of Double Trench Insulated Gate Bipolar Transistor

The trench Insulated Gate Bipolar Transistor— a high power switching device

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

Investigations of P-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

Crosstalk Analysis and Suppression for a Closed-Loop Active IGBT Gate Driver

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

The Effect of the Hole Current on the Channel Inversion in Trench Insulated Gate Bipolar-Transistors (Tigbt)

Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

High Performance Carrier Stored Trench Bipolar Transistor with Dual Shielding Structure

The GaN trench MOSFET with adaptive voltage tolerance achieved through a dual-shielding structure

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

A voltage controlled current source gate drive method for IGBT devices

SiC Trench IGBT with Diode-Clamped P-Shield for Oxide Protection and Enhanced Conductivity Modulation

A New Carrier Stored Trench Igbt Realizing Both Ultra Low V-On And Turn-Off Loss

Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss

Charge Storage Effect in SiC Trench MOSFET with a Floating P-Shield and Its Impact on Dynamic Performances

High Performance Carrier Stored Trench Bipolar Transistor with Shield Emitter Trench