Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

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Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-Recessed Gated Schottky Drain

A High Performance Normally-Off AlGaN/GaN Split-Gate Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) Using Piezo Neutralization Technique

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

Normally-off trench JFET technology in 4H silicon carbide

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT with Low Reverse Leakage Current and Low ON-State Resistance

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

Characterization of 880 V Normally off GaN MOSHEMT on Silicon Substrate Fabricated with a Plasma-Free, Self-Terminated Gate Recess Process

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION / IOFF ratio and steep subthreshold swing

Hybrid P-Gan/mis Gate HEMT Suppressing Drain-Induced Dynamic Threshold Voltage Instability

An Interdigitated Gan Mis-Hemt/Sbd Normally-Off Power Switching Device With Low On-Resistance And Low Reverse Conduction Loss