Abstract:Herein, the Cu target is prepared by combining different pieces, with a large variation in grain size, and installed in a UDP-650 closed-field unbalanced ion coating machine for sputtering experiments. The influence of grain size on surface morphology and sputtering performance of Cu targets is studied under the same process conditions. In the constant current mode, the sputtering voltage of target continues to decrease during the target lifetime, which is consistent with the increase of magnetic field intensity on the target surface due to the decrease of target thickness. During the first 7.5 h of sputtering erosion, the sputtering yield of Cu target slightly increases with sputtering time, followed by a gradual decrease. The results reveal that the grain size renders a significant effect on surface morphology of the Cu target after sputtering. The Cu target with small grain size renders high particle density in the edge area of sputter erosion groove, however, the particle-like morphology size is not influenced by the grain size. In the deepest region of sputtering erosion, the Cu target with two distinct grain sizes presents a flat morphology and the smaller grain size results in more flat morphology. At each stage of the life cycle of target material, the Cu target sputtering voltage initially decreases and, then, gradually becomes stable, while the cavity pressure initially increases and gradually becomes stable. The sputtering yield of the samples, with the grain size of 10–20 μm, is found to be greater than the samples with the grain size of 120–150 μm during each stage. Therefore, the Cu target with a small grain size should be selected to ensure the desired film deposition rate and stability of the sputtering process.

Correlation Between the Formation of Particle Defects on Sputtered Cu Seed Layers and Cu Targets

Effects of grain size, dislocation density, and texture type on the etching behavior of Cu target in magnetron sputtering process

Effect of a Cu seed layer on electroplated Cu film

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment.

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Surface roughness analysis of Cu seed layer deposited on α-Ti diffusion barrier layer: A molecular dynamics simulation study

Microstructure Analysis Of Sputtered Copper Thin Film In Packaging Substrate

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

Influence of grain size of Cu target on its magnetron sputtering erosion and parameters

Surface protrusion induced by inter-diffusion on Cu-Sn micro-pillars

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Detection and Formation Mechanism of Micro-Defects in Ultrafine Pitch Cu—Cu Direct Bonding

Microstructure evolution and anti-wear mechanism of Cu film fabricated by magnetron sputtering deposition

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Effect of target grain size on target sputter etching morphology and performance

Effects of initial Cu grain size and impurity residues on the liquid phase reactions between molten solder and electroplated Cu

Molecular dynamics simulations and analyzation of Cu deposited on stainless steel substrate surfaces

Study on the formation mechanism of surface defects in the processing of large particle SiCp/Al composites