Abstract:Phase‐change memory is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with current manufacturing processes and the good scaling behavior. Despite intensive research efforts that are devoted to the modification of Ge2Sb2Te5 (GST) phase‐change material, the obtained improvements are still unsatisfactory for high‐performance applications. In this paper, SiC‐modification is first introduced to enhance the amorphous stability of GST without sacrificing its transition speed. Several enhancements can be demonstrated, including better thermal stability (10‐year data retention above 120 °C), lower RESET voltage (about 3.0 V at 20 ns pulse width), reduced volume change (smaller than 3.0%), and expected operation cycles (more than 1.0 × 105). According to the findings, the local bonding nature of Ge/Te atoms can be tuned by C/Si dopants through forming CGe and SiTe bonds. Apart from strengthening the atomic binding network for desirable data retention, the element interdiffusion is also effectively controlled and suppressed. Together with finer grains, smaller density change, and more uniform morphology, the modified structure transition finally contributes to the reduced switching voltage and long‐term endurance. Hence, it is envisaged that SiC‐doped GST with such advantages will give a competitive option for high‐density and high‐performance embedded memory.

Effect of Si Doping on the Structure and Optical Properties of Ge2Sb2Te5 Studied by Ab Initio Calculations

First Principles Study of Crystal Si-Doped Ge2sb2te5

Ab Initio Study on the Fast Reversible Phase Transitions of Ge2Sb2Te5

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Study of interfaces between phase‐change material Ge2Sb2Te5 and prevalent complementary metal‐oxide semiconductor materials by XPS

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Theoretical and Experimental Investigations of the Optical Properties of Ge2sb2te5 for Multi-State Optical Data Storage

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effect of Cu Doping on Microstructure and Thermal Stability of Ge2Sb2Te5 Thin Film

Nitrogen-doped Ge 2 Sb 2 Te 5 films for nonvolatile memory

Nitrogen-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films for nonvolatile memory

SiC‐Doped Ge2Sb2Te5 Phase‐Change Material: A Candidate for High‐Density Embedded Memory Application

Improved Thermal and Electrical Properties of Al-Doped Ge2sb2te5 Films for Phase-Change Random Access Memory

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

Influence of Sn Dopant on the Crystallization of Amorphous Ge2Sb2Te5 by a Picosecond Pulsed Laser Irradiation