Abstract:The reversible switching between the amorphous and crystalline phases of Ge 2 Sb 2 Te 5 (GST) is investigated with ab initio molecular dynamics. We apply different quench rates (-16 K/ps, -5 K/ps, -2 K/ps, and -0.45 K/ps) and different annealing temperatures (500 K, 600 K, 700 K, and 800 K) to amorphize and crystallize GST respectively. Results show that the generated amorphous is strongly dependent on the quench rate. For -16 K/ps and -5 K/ps, generated amorphous samples have different density of crystal seeds, higher in the later. The amorphous structure formed at -2 K/ps contains a single crystalline cluster, while that formed at the quench rate of -0.45 K/ps had sufficient time to completely crystallize the amorphous phase. Annealing the amorphous systems formed at different rates shows that crystallization depends both on the annealing temperature and on the structure of the initial system (i.e., whether or not it contains crystalline clusters or crystal seeds). At 500 K, formation of crystalline clusters occurs readily within a few ps while the rate at which they grow is slow, taking 0.9 ns to complete the crystallization. In contrast, crystalline cluster formation is inhibited at 800 K. In the intermediate temperature range, both crystalline cluster formation and growth occur within a few hundred ps indicating that these temperatures leads to the fastest crystallization. The crystallization of a 63-atom at ~900 K resulted in a highly relaxed crystal structure showing a clear tendency for separation of Ge and Sb species in layers. This model also indicates a tendency of segregation of vacancies, suggesting that vacancy layering may play a key role in the crystallization process.

First Principles Study of Crystal Si-Doped Ge2sb2te5

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

First-Principles Study Of Gamma-Si3n4 With Generalized Gradient Approximation And Local Density Approximation

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Atomistic origin of doping-enhanced rapid crystallization in Ag-doped Ge-Sb-Te alloys: a joint experimental and theoretical study

Investigations on phase change characteristics of Ti-doped Ge2Sb2Te5 system

Monocrystalline silicon materials with the group IVA elements doped: A first-principles analysis

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Study on Electronic Structure and Optical Property of Silicon Doped with Transition Metal by First Principles

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

First-Principles Study Of Transition Metal Impurities In Si

The Amorphization and Crystallization of Ge 2 Sb 2 Te 5 : an Ab Initio Molecular Dynamics Study

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

Electronic, optical and thermal properties of the hexagonal and fcc Ge2Sb2Te5 chalcogenide from first-principle calculations

Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge 1 Sb 2 Te 4

Role of silicon on the conductivity GaSb surface: A first-principles study

Effects of S-doping on the Electronic Transition, Band Gap, and Optical Absorption of GaSe1−xSx Single Crystals

First-principles Study of the Effects of Si Doping on Geometric and Electronic Structure of Closed Carbon Nanotube

B23-O-14 Direct Observation the Vacant Sites in the GeSbTe Metastable Polycrystalline Phase