Abstract:Ge-Sb-Te (GST) alloys are leading phase-change materials for data storage due to the fast phase transition between amorphous and crystalline states. Ongoing research aims at improving the stability of the amorphous phase to improve retention. This can be accomplished by the introduction of carbon as a dopant to Ge2Sb2Te5, which is known to alter the short- and mid-range structure of the amorphous phase and form covalently bonded C clusters, both of which hinder crystallization. The relative importance of these processes as a function of C concentration is not known. We used molecular dynamics simulation based on density functional theory to study how carbon doping affects the atomic structure of GST-C. Carbon doping results in an increase in tetrahedral coordination, especially of Ge atoms, and this is known to stabilize the amorphous phase. We observe an unexpected, non-monotonous trend in the number of tetrahedral bonded Ge with the amount of carbon doping. Our simulations show an increase in the number of tetrahedral bonded Ge up to 5 at.% C, after which the number saturates and begins to decrease above 14 at.% C. The carbon atoms aggregate into clusters, mostly in the form of chains and graphene flakes, leaving less carbon to disrupt the GST matrix at higher carbon concentrations. Different degrees of carbon clustering can explain divergent experimental results for recrystallization temperature for carbon doped GST.

Effect of Cu Doping on Microstructure and Thermal Stability of Ge2Sb2Te5 Thin Film

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Phase Change Characteristics of Aluminum Doped Ge_2Sb_2Te_5 Films Prepared by Magnetron Sputtering

Improvement in thermal stability and crystallization mechanism of Sm doped GeSbTe thin films for phase change memory applications

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Improvement of Electrical Properties of the Ge2sb2te5 Film by Doping Si for Phase-Change Random Access Memory

Characteristics of phase transition in boron-implanted Ge<sub>2</sub> Sb<sub>2</sub> Te<sub>5</sub> thin films for phase change memory applications

Effects of carbon concentration on the local atomic structure of amorphous GST

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Enhanced Threshold Voltage of Zn-doped Ge2Sb2Te5phase-change Memory Deposited by Electron-Beam Evaporation

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation