Abstract:In this work, phase change chalcogenide Ge2Sb2Te5 (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical constants (refractive index and extinction coefficient), of such alloys were systematically studied by investigating their thermally and photo-thermally induced switching between different phases. The results show that GST films are highly tunable in microstructure and optical constants, either by post-annealing at 160 degrees C, 200 degrees C, 250 degrees C and 350 degrees C, respectively, or by laser irradiation of 1 mW, 3 mW, 5 mW and 10 mW power with beam diameter of 7 m at 532 nm, respectively. From the structural analysis, we can clearly observe different crystallinities and chemical bonding in the different post-treated GST films. The optical constants of GST films under various phases were obtained from spectrophotometry, by fitting their transmittance data with the Tauc-Lorentz (TL) dispersion model. The refractive index and extinction coefficient exhibit notable change upon annealing and laser irradiation, specifically at 1550 nm, from 3.85 (amorphous) to 6.5 (crystalline) in refractive index. The optical constants have been proved capable of fine tuning via the laser irradiation method. Hence, the pronounced adjustability in optical properties due to rapid and repeatable phase change render GST suitable for tunable photonic devices.

Study of interfaces between phase‐change material Ge2Sb2Te5 and prevalent complementary metal‐oxide semiconductor materials by XPS

In-situ Observation of Ge2Sb2Te5 Crystallization at the Passivated Interface

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

The Relationship between Electron Transport and Microstructure in Ge2Sb2Te5 Alloy

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Fermi-level Pinning and Charge Neutrality Level in Nitrogen-Doped Ge2Sb2Te5: Characterization and Application in Phase Change Memory Devices

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Enhanced threshold voltage of Zn-doped Ge2Sb2Te 5 phase-change memory deposited by electron-beam evaporation

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Electronic Properties of GST for Non-Volatile Memory

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Enhanced Threshold Voltage Of Zn-Doped Ge2sb2te5 Phase-Change Memory Deposited By Electron-Beam Evaporation

Lattice Thermal Conductivity of M GeTe • N Sb 2 Te 3 Phase-Change Materials : A First-Principles Study

Impact of Various Dopants on Thermoelectric Transport Properties of Polycrystalline GeSb2Te4

The Origin of Hexagonal Phase and Its Evolution Process in Ge2Sb2Te5 Alloy

Investigation of changes in band gap and density of localized states on phase transition for Ge 2Sb 2Te 5 and Si 3.5Sb 2Te 3 materials

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory