Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

Yi Wei,Haiyan Ou

DOI: https://doi.org/10.1021/acsomega.9b01753

IF: 4.1

2019-01-01

ACS Omega

Abstract:The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen−boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the twomeasurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.