External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

Jiabin Feng,Yongzhuo Li,Song Fu,Jianxing Zhang,Zizhao Zhong,Hao Sun,Lin Gan,C. Z. Ning
DOI: https://doi.org/10.1364/cleo_si.2019.sth3o.1
2019-01-01
Abstract:We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of $10^{-4}\sim 5\times 10^{-3}$ at $5\sim 300\mathrm{K}$ © 2019 The Author(s)
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