Electrically Pumped Light-emitting Device Based on MoTe2 Directly Integrated with Doped Silicon

Jianxing Zhang,Yongzhuo Li,Song Fu,Jiabin Feng,Cun-Zheng Ning

DOI: https://doi.org/10.1364/cleo_at.2020.jth2f.19

2020-01-01

Abstract:We demonstrate an electrically pumped light emitting device by integrating a monolayer MoTe2 directly on doped Silicon to form a Si-MoTe2 double heterostructure. An external quantum efficiency of ~0.65% was achieved.

What problem does this paper attempt to address?

A MoTe2-based Light-Emitting Diode and Photodetector for Silicon Photonic Integrated Circuits.

Ya-Qing Bie,Gabriele Grosso,Mikkel Heuck,Marco M. Furchi,Yuan Cao,Jiabao Zheng,Darius Bunandar,Efren Navarro-Moratalla,Lin Zhou,Dmitri K. Efetov,Takashi Taniguchi,Kenji Watanabe,Jing Kong,Dirk Englund,Pablo Jarillo-Herrero

DOI: https://doi.org/10.1038/nnano.2017.209

IF: 38.3

2017-01-01

Nature Nanotechnology

Abstract:Optical interconnect components based on bilayer MoTe 2 p–n junctions can be directly integrated with silicon photonics
Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Yunpeng Li,Canxing Wang,Lu Jin,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.4803020

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We report on remarkable decrease in threshold current for electrically pumped random lasing (RL) from the light-emitting device based on two-fold-tandem (double-) SiO2/ZnO-structure with respect to that in the case of single-SiO2/ZnO-structured device. Moreover, the former is of higher power conversion efficiency. In the double-SiO2/ZnO-structure, a waveguide is formed by the stacking SiO2/ZnO/SiO2, which enables photon confinement. Moreover, the electrons leaking out of the bottom SiO2/ZnO-structure are collected and partly involved in the radiative recombination in the top one. Furthermore, the RL photons generated in the bottom SiO2/ZnO-structure act as the stimuli to increase the stimulated emission rate in the top one. For the above-mentioned reasons, the RL performance of the double-SiO2/ZnO-structured device is substantially improved.
Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

Xingwang Zhang,Shinhyuk Choi,Dake Wang,Carl H. Naylor,A. T. Charlie Johnson,Ertugrul Cubukcu

DOI: https://doi.org/10.1021/acs.nanolett.7b02777

IF: 10.8

2017-01-01

Nano Letters

Abstract:Atomically thin transition metal dichalcogenides like MoS2 monolayers exhibit unique luminescent properties. However, weak quantum yield and low light absorption hinder their practical applications in two-dimensional light emitting devices. Here, we report 1300 times enhancement in photoluminescence emission from a MoS2 monolayer via simultaneous Fano resonances in a dielectric photonic crystal. The spatially extended double Fano resonance scheme allows resonant enhancement of both the MoS2 absorption and emission. We also achieve unidirectional emission within a narrow divergence angle of 5° by engineering the Fano resonance angular dispersion. Our approach provides a new platform for efficient light sources with high directionality based on emerging two-dimensional materials.
High performance MoTe 2 /Si heterojunction photodiodes

Wenyu Lei,Guowei Cao,Xiaokun Wen,Li Yang,Pengzhen Zhang,Fuwei Zhuge,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1063/5.0062788

IF: 4

2021-09-27

Applied Physics Letters

Abstract:We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible chemical vapor deposition method. The devices exhibit an ultrafast response speed with a rise/fall time of 5/8 μs, a broadband (400–1550 nm) photoresponse, a high on/off ratio of ∼104, and self-powered photo-detection with a zero bias responsivity of 0.26 A W−1 and a detectivity of 2 × 1013 Jones at 700 nm wavelength. The devices further show high stability in air for one month. This investigation offers the feasibility to fabricate high performance MoTe2/Si photodiodes for future vital optoelectronic applications.

physics, applied
High performance MoTe2/Si heterojunction photodiodes

Wenyu Lei,Guowei Cao,Xiaokun Wen,Li Yang,Pengzhen Zhang,Fuwei Zhuge,Haixin Chang,Wenfeng Zhang

DOI: https://doi.org/10.1063/5.0062788

IF: 4

2021-01-01

Applied Physics Letters

Abstract:We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible chemical vapor deposition method. The devices exhibit an ultrafast response speed with a rise/fall time of 5/8 mu s, a broadband (400-1550 nm) photoresponse, a high on/off ratio of & SIM;10(4), and self-powered photo-detection with a zero bias responsivity of 0.26 A W-1 and a detectivity of 2 x 10(13) Jones at 700 nm wavelength. The devices further show high stability in air for one month. This investigation offers the feasibility to fabricate high performance MoTe2/Si photodiodes for future vital optoelectronic applications.
Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Zhi-Qian Wu,Jing-Liang Yang,Nallappagar K. Manjunath,Yue-Jiao Zhang,Si-Rui Feng,Yang-Hua Lu,Jiang-Hong Wu,Wei-Wei Zhao,Cai-Yu Qiu,Jian-Feng Li,Shi-Sheng Lin

DOI: https://doi.org/10.1002/adma.201706527

IF: 29.4

2018-01-01

Advanced Materials

Abstract:2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS2. With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W-1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS2 photodetectors.
Efficient silicon quantum dots light emitting diodes with an inverted device structure

li yao,ting yu,lixiang ba,hu meng,xin fang,yilun wang,lei li,xin rong,suo wang,xinqiang wang,guangzhao ran,xiaodong pi,guogang qin

DOI: https://doi.org/10.1039/c5tc03064a

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:We use silicon quantum dots (SiQDs) with an average diameter of 2.6 +/- 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (similar to 3.1 eV) cathode and MoO3/Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at similar to 700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%.
External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

Jiabin Feng,Yongzhuo Li,Song Fu,Jianxing Zhang,Zizhao Zhong,Hao Sun,Lin Gan,C. Z. Ning

DOI: https://doi.org/10.1364/cleo_si.2019.sth3o.1

2019-01-01

Abstract:We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of $10^{-4}\sim 5\times 10^{-3}$ at $5\sim 300\mathrm{K}$ © 2019 The Author(s)
High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Teng Sun,Yuhao Wang,Junnan Han,Jiaming Chen,Ting Zhu,Dongke Li,Wei Li,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1063/5.0211513

IF: 4

2024-07-15

Applied Physics Letters

Abstract:Realizing high efficiency of all Si-based light-emitting devices is currently one of interesting issues in order to develop monolithic opto-electronic integration on chips. Here, we report an electroluminescence device based on phosphorus (P)-doped silicon nanocrystals (Si NCs)/silicon carbide (SiC) multilayers by modulating carrier injection and recombination process. The p+-Si substrate is used instead of p-Si substrate for facilitating the hole injection into Si NCs. Additionally, the influences of annealing temperature on the device performance have been studied, and the optimized annealing temperature is achieved by balancing the crystallinity, defect state density, and recombination process.

physics, applied
Fabricating In-Plane MoTe2 P-N Homojunction Photodetector Using Laser-Induced P-Type Doping

Jing Chen,Junqiang Zhu,Ping Li,Xiao-Ming Wu,Ran Liu,Jing Wan,Tian-Ling Ren

DOI: https://doi.org/10.1109/ted.2021.3099082

2021-01-01

Abstract:The p-n homojunction devices based on 2-D-layered materials (2DLMs) with unusual physical characteristics are gaining extensive research on their use in photodetectors. However, the current fabrication of p-n homojunction devices based on 2DLMs needs a complex doping method. In our work, the laser-irradiation method is a simple and straightforward selective p-type doping technique for the 2-D semiconductor molybdenum ditelluride (MoTe 2 ). The laser-oxidized product MoO x is responsible for p-type doping in MoTe 2 . The laser-irradiation technique has been used to directly write an in-plane MoTe 2 p-n homojunction device, where the laser-scanned region is p-doped and the neighboring region is electrically n-doped by applying a positive back-gate voltage. The MoTe 2 p-n homojunction device has been used as a photodetector, which shows a high photoswitching ratio of 10 5 under the illumination of 633 nm at 6.5 μW and a short photoresponse time of 232 μs. The selective p-doped technique using a laser-irradiation method can be used in future logic circuits based on 2-D materials.
Efficient and Layer-Dependent Exciton Pumping Across Atomically Thin Organic-Inorganic Type-I Heterostructures

Linglong Zhang,Ankur Sharma,Yi Zhu,Yuhan Zhang,Bowen Wang,Miheng Dong,Hieu T. Nguyen,Zhu Wang,Bo Wen,Yujie Cao,Boqing Liu,Xueqian Sun,Jiong Yang,Ziyuan Li,Arara Kar,Yi Shi,Daniel Macdonald,Zongfu Yu,Xinran Wang,Yuerui Lu

DOI: https://doi.org/10.1002/adma.201803986

IF: 29.4

2018-01-01

Advanced Materials

Abstract:The fundamental light-matter interactions in monolayer transition metal dichalcogenides might be significantly engineered by hybridization with their organic counterparts, enabling intriguing optoelectronic applications. Here, atomically thin organic-inorganic (O-I) heterostructures, comprising monolayer MoSe2 and mono-/few-layer single-crystal pentacene samples, are fabricated. These heterostructures show type-I band alignments, allowing efficient and layer-dependent exciton pumping across the O-I interfaces. The interfacial exciton pumping has much higher efficiency (>86 times) than the photoexcitation process in MoSe2 , although the pentacene layer has much lower optical absorption than MoSe2 . This highly enhanced pumping efficiency is attributed to the high quantum yield in pentacene and the ultrafast energy transfer between the O-I interface. Furthermore, those organic counterparts significantly modulate the bindings of charged excitons in monolayer MoSe2 via their precise dielectric environment engineering. The results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using atomically thin O-I heterostructures.
MoTe 2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

Chen Li,Ruijuan Tian,Ruixuan Yi,Siqi Hu,Yuxin Chen,Qingchen Yuan,Xutao Zhang,Yan Liu,Yue Hao,Xuetao Gan,Jianlin Zhao

DOI: https://doi.org/10.1021/acsphotonics.1c00628

IF: 7

2021-06-16

ACS Photonics

Abstract:We demonstrate a straightforward construction of MoTe2 PN homojunction on a silicon photonic crystal cavity, which promises the realizations of cavity-enhanced optoelectronic devices integrated on silicon photonic chips. The employed silicon photonic crystal cavity has an air-slot in the middle to split it into two parts, which directly function as two individual back-gate electrodes of the top-coated few-layer MoTe2. Beneficial from MoTe2's ambipolar property, reconfigured (PN, NN, PP, NP) homojunctions are realized by controlling the gate voltages of the two separated silicon electrodes. For instance, on/off ratios exceeding 104 are obtained from the PN or NP homojunctions, and the ideality factors could approach 1.00. On the other hand, the silicon photonic crystal cavity could enhance light absorption in the coated MoTe2, promising high-performance photodetection. By coupling the resonant mode with the MoTe2 PN junction, a high photoresponsivity of 156 mA/W is obtained at the wavelength of 1353.7 nm, though it is the limit of MoTe2's absorption bandedge. As attributes of the PN junction, the photodetector has a dark current as low as 0.14 nA and a response bandwidth exceeding 1.1 GHz. The proposed device geometry has advantages of employing silicon photonic crystal cavity as the back gates of MoTe2 PN junction directly and simultaneously to enhance light–MoTe2 interactions, which might open a new avenue to construct MoTe2-based laser diodes and electro-optic modulators on silicon photonic chips.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.1c00628?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.1c00628</a>.Design and characterizations of the silicon PC cavity; atomic force microscopy (AFM) images of employed 2D materials in the main text; mode coupling between MoTe2 and PC cavity resonant mode; electrical and optoelectrical properties of device 2; electrical and optoelectrical properties of device 3; schematics of the experiment systems; photoresponses of the device in the main text; estimation of the electrical bandwidth of the MoTe2 PN junction; performance comparisons with other 2D material PN homojunctions and MoTe2-based photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.1c00628/suppl_file/ph1c00628_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure Toward a Self-Driven Photodetector and Complementary Logic Circuits.

Wennan Hu,Hu Wang,Jianguo Dong,Haoran Sun,Yue Wang,Zhe Sheng,Zengxing Zhang

DOI: https://doi.org/10.1021/acsami.2c21785

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe2/MoSe2 p-n heterojunction, in which the hole-dominated transport polarity of MoTe2 is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W-1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 1011 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe2 and n-MoSe2 on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.
Record Efficiency of Infrared 2D Materials Light-Emitting Diode Based on a Type-I MoTe2/WSe2 Heterostructure

Yutong Zhong,Yongzhuo Li,Jiabin Feng,Chen Li,Jialu Xu,Chenxin Yu,Cun-Zheng Ning

DOI: https://doi.org/10.1364/cleo_at.2024.atu4j.2

2024-01-01

Abstract:We demonstrate an efficient infrared light-emitting diode based on a type-I MoTe2/WSe2 heterostructure with a record EQE of 1% at room temperature, where multilayer WSe2 boosts carrier transport while monolayer MoTe2 enhances radiative recombination.
Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Fang Zhong,Jiafu Ye,Ting He,Lili Zhang,Zhen Wang,Qing Li,Bo Han,Peng Wang,Peisong Wu,Yiye Yu,Jiaxiang Guo,Zhenhan Zhang,Meng Peng,Tengfei Xu,Xun Ge,Yang Wang,Hailu Wang,Muhammad Zubair,Xiaohao Zhou,Peng Gao,Zhiyong Fan,Weida Hu

DOI: https://doi.org/10.1002/smll.202102855

IF: 13.3

2021-01-01

Small

Abstract:2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.
Lateral and Vertical p–n Homojunctions Formed in Few-Layer MoTe 2 with In Surface Charge-Transfer Doping

Qing Luo,Miaomiao Li,Xiangzhe Zhang,Hongxiang Shi,Guang Wang,Sen Zhang,Chuyun Deng,Wei Luo,Mengjian Zhu,Shiqiao Qin,Gang Peng

DOI: https://doi.org/10.1021/acsaelm.1c00407

IF: 4.494

2021-07-29

ACS Applied Electronic Materials

Abstract:Two-dimensional (2D) layered molybdenum ditelluride (2H-MoTe2) has attracted tremendous research interest for enabling device applications with unconventional features and performance. Forming p–n homojunctions turns out to be very crucial for the device applications in photovoltaic detectors. Here, indium (In) surface electron transfer doping is found to be an efficient way to form an air-stable p–n homojunction in the MoTe2 flakes. With different thickness In layers depositing on the MoTe2, the carrier mobility of the MoTe2 flake is rationally modulated, and its electron mobility is enhanced from 0.2 to 19 cm2 V–1 s–1. The effective carrier modulation of the MoTe2 with In electron doping enables to achieve lateral and vertical p–n homojunctions formed in the flake. The photoresponsivity of the lateral photovoltaic detector is about 6 mA/W at 532 nm and 4 mA/W at 1064 nm. The photoresponsivity of the vertical device (Pt/MoTe2/In/Au) is about 125 mA/W at 532 nm and 100 mA/W at 1064 nm. These results would be beneficial for fabricating future 2D semiconductor-based optoelectronic devices.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00407.Details of the electrode transfer method; characterization of the thin In film with different thicknesses; scanning photocurrent image of the partially In-doped MoTe2 FET with focused 1064 nm laser; detailed surface potentials of the lateral MoTe2 homojunction; characteristics of a Pt-contacted MoTe2 FET; scanning photocurrent image of the vertical Pt/MoTe2/In/Au device with focused 1064 nm laser; photocurrent response of the vertical Pt/MoTe2/indium/Au device; and photovoltage response of the vertical Pt/MoTe2/indium/Au device (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Teng Sun,Dongke Li,Jiaming Chen,Yuhao Wang,Junnan Han,Ting Zhu,Wei Li,Jun Xu,Kunji Chen

DOI: https://doi.org/10.3390/nano13061109

IF: 5.3

2023-03-20

Nanomaterials

Abstract:Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO2 (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Epitaxial Growth of 1D Te/2D MoSe2 Mixed‐Dimensional Heterostructures for High‐Efficient Self‐Powered Photodetector

Jiawen You,Zijing Jin,Yuyin Li,Ting Kang,Kenan Zhang,Wenliang Wang,Mengyang Xu,Zhaoli Gao,Jiannong Wang,Jang‐Kyo Kim,Zhengtang Luo

DOI: https://doi.org/10.1002/adfm.202311134

IF: 19

2023-12-01

Advanced Functional Materials

Abstract:Highly aligned 1D tellurium is epitaxially grown on 2D monolayer transition metal dichalcogenides (TMDs). A one‐pot chemical vapor deposition (CVD) technique eliminates the normally required transfer steps, thereby producing mixed‐dimensional heterostructures with an ultraclean interface and good contact. The mixed‐dimensional p‐n Te/MoSe2 heterojunction photodetector presents self‐driven behavior with high responsivity (328 mA W−1), external quantum efficiency (79 %), and specific detectivity (8.2 × 109 Jones). Mixed‐dimensional heterostructures provide additional freedom to construct diverse functional electronic and optoelectronic devices, gaining significant interest. Herein, highly‐aligned pseudo‐1D tellurium is epitaxially grown on 2D monolayer transition metal dichalcogenides (TMDs), including MoSe2, MoS2, and WS2. A one‐pot chemical vapor deposition (CVD) technique eliminates the normally required transfer steps, thereby producing mixed‐dimensional heterostructures with an ultraclean interface. The controllable epitaxial growth of Te/TMD heterostructures are verified by Raman, scanning probe microscopy (SPM), and transmission electron microscopy (TEM) observation. The photoluminescence results indicate that the emission from TMDs is quenched in the heterostructure, confirming the efficient transfer of photogenerated carriers from TMDs to Te. Additionally, the mixed‐dimensional p‐n Te/MoSe2 heterojunction photodetector presents self‐driven behavior with high responsivity (328 mA W−1), external quantum efficiency (79%), and specific detectivity (8.2 × 109 Jones). The modified facile synthesis strategy and proposed growth mechanism in this study shed light on synthesizing mixed‐dimensional heterojunctions. This opens avenues for fabricating functional devices with reduced sizes and high densities, further enabling miniaturization and integration opportunities.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

Yutong Zhong,Hanyuan Ma,Qian Lv,Yongzhuo Li,Jiabin Feng,Chen Li,Jialu Xu,Chenxin Yu,Ruitao Lv,Cun-Zheng Ning

DOI: https://doi.org/10.1364/cleo_si.2024.sf2r.5

2024-01-01

Abstract:We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe2/WSe2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.
Enhanced Emission of Molybdenum Disulfide by Organic–Inorganic Hybrid Heterojunctions

Si-Wei Zhang,Fulong Ma,Jinhui Jiang,Zaiyu Wang,Zijie Qiu,Jacky W. Y. Lam,Guodan Wei,Zheng Zhao,Ben Zhong Tang

DOI: https://doi.org/10.1021/prechem.3c00067

2023-01-01

Abstract:Due to their excellent stability and layer-dependent photoelectronic properties, transition metal dichalcogenides (TMDs) are one of the most extensively studied two-dimensional semiconductor materials in the postgraphene era. However, its low luminescence quantum yield limits its application in displays, lighting, and imaging. Here, a 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN) layer was grown on the surface of chemical vapor deposition (CVD)-grown monolayer molybdenum disulfide (MoS2) by vacuum evaporation, which increased the photoluminescence intensity of MoS2 by 15 times. The enhanced luminescence originates from the charge transfer from the conduction band of MoS2 to the lowest unoccupied molecular orbital (LUMO) of HATCN, which suppresses the emission of the negatively charged exciton (trion) while increasing the emission of the neutral exciton. Temperature-dependent fluorescence and Raman spectra demonstrate the feasibility of organic–inorganic hybrid heterojunctions for regulating excitons. This facile and practical organic–inorganic hybrid heterojunction can elevate TMD applications, such as light-emitting diodes.

Electrically Pumped Light-emitting Device Based on MoTe2 Directly Integrated with Doped Silicon

A MoTe2-based Light-Emitting Diode and Photodetector for Silicon Photonic Integrated Circuits.

Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Unidirectional Doubly Enhanced MoS2 Emission Via Photonic Fano Resonances

High performance MoTe 2 /Si heterojunction photodiodes

High performance MoTe2/Si heterojunction photodiodes

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Efficient silicon quantum dots light emitting diodes with an inverted device structure

External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Fabricating In-Plane MoTe2 P-N Homojunction Photodetector Using Laser-Induced P-Type Doping

Efficient and Layer-Dependent Exciton Pumping Across Atomically Thin Organic-Inorganic Type-I Heterostructures

MoTe 2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure Toward a Self-Driven Photodetector and Complementary Logic Circuits.

Record Efficiency of Infrared 2D Materials Light-Emitting Diode Based on a Type-I MoTe2/WSe2 Heterostructure

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.

Lateral and Vertical p–n Homojunctions Formed in Few-Layer MoTe 2 with In Surface Charge-Transfer Doping

Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode

Epitaxial Growth of 1D Te/2D MoSe2 Mixed‐Dimensional Heterostructures for High‐Efficient Self‐Powered Photodetector

Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

Enhanced Emission of Molybdenum Disulfide by Organic–Inorganic Hybrid Heterojunctions