Abstract:Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor deposition. Using a field-effect transistor design by incorporating a few-layer graphene back gate, single-layer graphene edge contact and encapsulation with few-layer hexagonal boron nitride, we achieve precise electrical tuning of exciton complexes and their transfer across 1D interfaces. At cryogenic temperatures (4 K), photoluminescence and photocurrent maps reveal the synergistic effect of local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in exciton and trion densities driven by exciton-trion conversion under electrical manipulation. The first-principle density functional theory calculation reveals significant band modification at the lateral interfaces and graphene-TMDs contact region. Furthermore, we demonstrate the versatility of 2D TMDS LHS in hosting and manipulating quantum emitters, achieving precise control over narrow-band emissions through modulating carrier injection and electrical biasing. This work extends the boundary of the present understanding of excitonic behaviour within lateral heterojunctions, highlighting the potential for controlled exciton manipulation across 1D interfaces and paving the way for next-generation electro-optical quantum devices.

Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2

Electroluminescence by Impact Excitation of Excitons in a Monolayer WSe2

Injection-free multiwavelength electroluminescence devices based on monolayer semiconductors driven by an alternating field

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe2–WSe2 Heterostructure

Lateral Heterojunctions Within Monolayer Semiconductors

Electroluminescence in Single Layer MoS2

1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Exciton-related Electroluminescence from Monolayer MoS2

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Enhancing photoluminescence of WSe2 in vapor grown WSe2/VOCl bilayer heterojunctions via surface passivation

Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting.

Lateral monolayer MoS2 homojunction devices prepared by nitrogen plasma doping