Abstract:We have studied the excitonic properties of exfoliated tungsten diselenide (WSe$_2$) monolayers transferred to gold substrates using the tunneling current in a Scanning Tunneling Microscope (STM) operated in air to excite the light emission locally. In obtained spectra, emission energies are independent of the applied bias voltage and resemble photoluminescence (PL) results, indicating that, in both cases, the light emission is due to neutral and charged exciton recombination. Interestingly, the electron injection rate, that is, the tunneling current, can be used to control the ratio of charged to neutral exciton emission. The obtained quantum yield in the transition metal dichalcogenide (TMD) is $~5x10^{-7}$ photons per electron. The proposed excitation mechanism is the direct injection of carriers into the conduction band. The monolayer WSe$_2$ presents bright and dark defects spotted by STM images performed under UHV. STS confirms the sample as p-doped, possibly as a net result of the observed defects. The presence of an interfacial water layer decouples the monolayer from the gold support and allows excitonic emission from the WSe$_2$ monolayer. The creation of a water layer is an inherent feature of the sample transferring process due to the ubiquitous air moisture. Consequently, vacuum thermal annealing, which removes the water layer, quenches excitonic luminescence from the TMD. The tunneling current can locally displace water molecules leading to excitonic emission quenching and to plasmonic emission due to the gold substrate. The present findings extend the use and the understanding of STM induced light emission (STM-LE) on semiconducting TMDs to probe exciton emission and dynamics with high spatial resolution.

Electroluminescence by Impact Excitation of Excitons in a Monolayer WSe2

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors (Adv. Mater. 14/2024)

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Low-voltage Injection-free Electroluminescence Device Based on a Monolayer MoSe2/WSe2 Lateral Heterostructure

Electroluminescent vertical tunneling junctions based on WSe2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

A WSe2 vertical field emission transistor

Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers

Tunneling-current-induced local excitonic luminescence in p-doped WSe$_2$ monolayers

Optical response of WSe$_2$-based vertical tunneling junction

Electric-field-induced Optical Hysteresis in Single-Layer WSe2

Electronic Structure Evolution and Exciton Energy Shifting Dynamics in WSe2: from Monolayer to Bulk

Electroluminescence as a probe of strong exciton-plasmon coupling in few-layer WSe2

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Electronic and Optoelectronic Monolayer WSe2 Devices Via Transfer-Free Fabrication Method.

Observation of in-plane exciton-polaritons in monolayer WSe<sub>2</sub> driven by plasmonic nanofingers

Increased Formation of Trions and Charged Biexcitons by Above-Gap Excitation in Single-layer WSe 2

Photoinduced Doping and Photoluminescence Signature in an Exfoliated Ws2 Monolayer Semiconductor

Exciton-related Electroluminescence from Monolayer MoS2

Observation of in-plane exciton–polaritons in monolayer WSe 2 driven by plasmonic nanofingers

Exciton g-factors in monolayer and bilayer WSe$_2$ from experiment and theory