Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Optical response of WSe$_2$-based vertical tunneling junction

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Tunneling-current-induced local excitonic luminescence in p-doped WSe$_2$ monolayers

Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Electroluminescent vertical tunneling junctions based on WSe2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction.

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Energy-resolved Photoconductivity Mapping in a Monolayer-bilayer WSe2 Lateral Heterostructure

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Valley-polarized Local Excitons in WSe2/WS2 Vertical Heterostructures.

The Trilayer Exciton Emission in WSe2/WS2/MoS2 Van Der Waals Heterostructures

Enhancement of direct and indirect exciton emissions in few-layer WSe2 at high temperatures

Optical response of monolayer, few-layer and bulk tungsten disulfide

Shedding light on the monolayer-WSe2 exciton's nature by optical effective-mass measurements

Temperature and Power-Dependent Photoluminescence Spectroscopy in Suspended WSe2 Monolayer

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments