Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Enhancement of direct and indirect exciton emissions in few-layer WSe2 at high temperatures

Temperature and Power-Dependent Photoluminescence Spectroscopy in Suspended WSe2 Monolayer

High-temperature phonon-assisted upconversion photoluminescence of monolayer WSe2

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Temporal evolution of low-temperature phonon sidebands in WSe$_2$ monolayers

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Observation of In-Plane Exciton–polaritons in Monolayer WSe2 Driven by Plasmonic Nanofingers

Observation of in-plane exciton–polaritons in monolayer WSe 2 driven by plasmonic nanofingers

Electronic Structure Evolution and Exciton Energy Shifting Dynamics in WSe2: from Monolayer to Bulk

Excitonic resonances in thin films of WSe2: From monolayer to bulk material

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Increased Formation of Trions and Charged Biexcitons by Above-Gap Excitation in Single-layer WSe 2

The Trilayer Exciton Emission in WSe2/WS2/MoS2 Van Der Waals Heterostructures

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Increased formation of trions and charged biexcitons by above-gap excitation in single-layer $WSe_2$

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction.

Observation of Double Indirect Interlayer Exciton in WSe2/WS2 Heterostructure.

Layer-dependent signatures for exciton dynamics in monolayer and multilayer WSe 2 revealed by fluorescence lifetime imaging measurement

Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures

Probing of free and localized excitons and trions in atomically thin WSe2, WS2, MoSe2 and MoS2 in photoluminescence and reflectivity experiments