Photoinduced Doping and Photoluminescence Signature in an Exfoliated Ws2 Monolayer Semiconductor

X. H. Wang,J. Q. Ning,Z. C. Su,C. C. Zheng,B. R. Zhu,L. Xie,H. S. Wu,S. J. Xu

DOI: https://doi.org/10.1039/c6ra01836j

IF: 4.036

2016-01-01

RSC Advances

Abstract:Photoinduced doping effect in a mechanically-exfoliated high-quality tungsten disulfide (WS2) monolayer.

What problem does this paper attempt to address?

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Ke Wu,Hongxia Zhong,Quanbing Guo,Jibo Tang,Zhenyu Yang,Lihua Qian,Shengjun Yuan,Shunping Zhang,Hongxing Xu

DOI: https://doi.org/10.1002/adom.202101971

IF: 9

2022-01-01

Advanced Optical Materials

Abstract:Monolayer transition‐metal dichalcogenides grown by chemical vapor deposition (CVD) always contain certain types of defects that dramatically affect their electronic and optical properties. For CVD‐grown hexagonal WS2 monolayer, complex photoluminescence (PL) patterns are commonly observed, but the defect‐related optical mechanisms are still not well understood. Here, by combining the optical and structural characterizations and ab initio calculations, the correlation between the patterned PL emission and the details of defects in CVD‐grown hexagonal WS2 monolayer are revealed. The temperature‐dependent PL spectra show the correlation between the defect‐trapped and band‐edge exciton emission. The high‐resolution scanning transmission electron microscopy identifies the positive correlation between the density of WSx‐vacancy and PL intensity. In the end, the ab initio calculations and molecule adsorption PL spectra show that the coexistence of p‐ and n‐doping effects, caused by the W and S complex vacancy, weakens the modulation of molecular adsorption on PL intensity. This work gives new insights into the origin of the inhomogeneous PL distribution in WS2 monolayer, which provides important guidance in the regulation of electronic and optical properties of transition‐metal dichalcogenides via defect engineering.
Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Yanfei Lv,Feng Huang,Luxi Zhang,Jiaxin Weng,Shichao Zhao,Zhenguo Ji

DOI: https://doi.org/10.3390/coatings8060205

IF: 3.236

2018-05-30

Coatings

Abstract:Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL) emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

materials science, multidisciplinary,physics, applied, coatings & films
Photoinduced doping in monolayer WSe 2 transistors

zhangting wu,Jintao Hong,Jie Jiang,Peng Zheng,Liang Zheng,Zhenhua Ni,Yang Zhang

DOI: https://doi.org/10.7567/1882-0786/ab37ad

IF: 2.819

2019-01-01

Applied Physics Express

Abstract:Modulation of carrier type and concentration is of fundamental importance to 2D electronic and optoelectronic devices. We report photoinduced doping of monolayer WSe2 transistors through the combination of laser illumination and the gate bias, which is further confirmed by photoluminescence measurements. The scheme can be completed within hundreds of milliseconds and achieve reversible doping modulation. Optical property at low temperature, transient response, and retention characteristics of FETs suggest that the observed photoinduced doping can be mainly attributed to trap sites at the imperfect WSe2/SiO2 interfaces and the exfoliation-induced deformation. (C) 2019 The Japan Society of Applied Physics
Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Yanming Wang,Junrong Zhang,Tianhua Ren,Meng Xia,Long Fang,Xiangyi Wang,Xingwang Zhang,Kai Zhang,Junyong Wang

DOI: https://doi.org/10.1007/s12274-024-6762-7

IF: 9.9

2024-01-01

Nano Research

Abstract:Electrical modulation of luminescence is significant to modern light-emitting devices. Monolayer transition metal dichalcogenides are emerging direct-bandgap luminescent materials with unique excitonic properties, and the multiple exciton complexes provide new opportunities to modulate the property of luminescence in atomically thin semiconductors. Here, we report an electrical control of exciton emission in the oscillator strength and spatial distribution of excitons in a monolayer WS2. Effective modulation of excitonic emission intensity with a degree of modulation of 92
Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

X. H. Wang,Z. C. Su,J. Q. Ning,M. Z. Wang,S. J. Xu,S. Han,F. Jia,D. L. Zhu,Y. M. Lu

DOI: https://doi.org/10.1088/0022-3727/49/46/465101

2016-01-01

Journal of Physics D Applied Physics

Abstract:Monolayers of transition metal dichalcogenides (TMDs) have been recently demonstrated to be a new family of direct bandgap semiconductors exhibiting extraordinary excitonic effects and high-efficiency luminescence. Here we present a micro-photoluminescence (PL) study on temperature dependent luminescence of excitons from an exfoliated WS2 monolayer. It is found that lattice vibrations (i.e. phonons) have a profound influence on the excitonic luminescence of the WS2 monolayer in several aspects including the spectral peak shift, lineshape broadening, transfer, and even formation entropy of excitons. Our study not only leads to the determination of the fundamental excitonic bandgap: Eg=2.061 eV at T=0 K, but also reveals that 120 K is a ‘turning’ temperature for the competition and formation entropy of free excitons and defect-bound excitons in the studied 2D WS2 crystals.
Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Yuanbo Gong,Qiang Zhou,Xiaoli Huang,Bo Han,Xinpeng Fu,Hanxue Gao,Fangfei Li,Tian Cui

DOI: https://doi.org/10.1002/cnma.201600346

IF: 3.82

2017-01-01

ChemNanoMat

Abstract:Pressure engineering is considered as a novel strategy to modulate the properties of transition metal dichalcogenide materials. Here, through photoluminescence (PL) and Raman measurements, we investigate the electronic band structure variation and lattice vibrational dynamics of monolayer tungsten diselenide (WSe2) under pressure. As the pressure increases, the energy of the direct K -> K interband transition increases, whereas that of the indirect interband transition decreases, leading to a significant transition from direct to indirect Lambda -> Kband gap at 3.8GPa. With the increase of pressure, the intensity of the direct K -> K interband transition constantly decreases and finally vanishes around 12.2GPa. Moreover, a remarkable transition between A and LA(M) modes under pressure has been determined by virtue of Raman spectra variations, which indicate a pressure-induced lattice disorder. This work provides a deep understanding of the intrinsic variation of WSe2 under pressure, which effectively facilitates the development of device applications.
Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Ziyu Luo,Weihao Zheng,Nannan Luo,Bo Liu,Biyuan Zheng,Xing Yang,Delang Liang,Junyu Qu,Huawei Liu,Ying Chen,Ying Jiang,Shula Chen,Xiaolong Zou,Anlian Pan

DOI: https://doi.org/10.1021/acs.nanolett.2c00462

IF: 10.8

2022-02-28

Nano Letters

Abstract:Transition metal dichalcogenide monolayers exhibit ultrahigh surface sensitivity since they expose all atoms to the surface and thereby influence their optoelectronic properties. Here, we report an intriguing lightening of the photoluminescence (PL) from the edge to the interior over time in the WS2 monolayers grown by physical vapor deposition method, with the whole monolayer brightened eventually. Comprehensive optical studies reveal that the PL enhancement arises from the p doping induced by oxygen adsorption. First-principles calculations unveil that the dissociation of chemisorbed oxygen molecule plays a significant role; i.e., the dissociation at one site can largely promote the dissociation at a nearby site, facilitating the photoluminescence lightening. In addition, we further manipulate such PL brightening rate by controlling the oxygen concentration and the temperature. The presented results uncover the extraordinary surface chemistry and related mechanism in WS2 monolayers, which deepens our insight into their unique PL evolution behavior.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Ke Wu,Hongxia Zhong,Quanbing Guo,Jibo Tang,Zhenyu Yang,Lihua Qian,Shengjun Yuan,Shunping Zhang,Hongxing Xu

DOI: https://doi.org/10.1002/adom.202101971

IF: 9

2022-01-17

Advanced Optical Materials

Abstract:Monolayer transition‐metal dichalcogenides grown by chemical vapor deposition (CVD) always contain certain types of defects that dramatically affect their electronic and optical properties. For CVD‐grown hexagonal WS2 monolayer, complex photoluminescence (PL) patterns are commonly observed, but the defect‐related optical mechanisms are still not well understood. Here, by combining the optical and structural characterizations and ab initio calculations, the correlation between the patterned PL emission and the details of defects in CVD‐grown hexagonal WS2 monolayer are revealed. The temperature‐dependent PL spectra show the correlation between the defect‐trapped and band‐edge exciton emission. The high‐resolution scanning transmission electron microscopy identifies the positive correlation between the density of WSx‐vacancy and PL intensity. In the end, the ab initio calculations and molecule adsorption PL spectra show that the coexistence of p‐ and n‐doping effects, caused by the W and S complex vacancy, weakens the modulation of molecular adsorption on PL intensity. This work gives new insights into the origin of the inhomogeneous PL distribution in WS2 monolayer, which provides important guidance in the regulation of electronic and optical properties of transition‐metal dichalcogenides via defect engineering. The chemical vapor deposition‐grown hexagonal WS2 monolayer always exhibits alternating bright and dark photoluminescence domains. The correlation between the patterned photoluminescence emission and the details of defects is explored consistently by experiments and density functional theory calculations. The results indicate that the WS‐vacancy is the most likely vacancy that matters.

materials science, multidisciplinary,optics
Photoluminescence Inhomogeneity and Excitons in CVD-grown Monolayer WS2

Dan-Dan Ren,Jing-Kai Qin,Yang Li,Peng Miao,Zhao-Yuan Sun,Ping Xu,Liang Zhen,Cheng-Yan Xu

DOI: https://doi.org/10.1016/j.optmat.2018.04.043

IF: 3.754

2018-01-01

Optical Materials

Abstract:Transition metal dichalcogenides two-dimensional materials are of great importance for future electronic and optoelectronic applications. In this work, triangular WS2 monolayers with size up to 130 mu m were prepared via chemical vapor deposition method. WS2 monolayers presented uniform Raman intensity, while quenched photoluminescence (PL) was observed in the center. The PL quenching in the central part of WS2 monolayer flakes was attributed to the gradually increasing sulfur vacancies toward the center. The proportion of negative trion (X-) in PL spectrum increases with increasing sulfur vacancies in WS2. The enhanced binding energy of X- suggests higher Fermi level and n-doping level with larger sulfur vacancy concentration. Our findings may be beneficial to the development of integrated devices, and also explore the defect-induced optical and electrical properties for nanophotonics.
Tunneling-current-induced local excitonic luminescence in p-doped WSe$_2$ monolayers

Ricardo Javier Peña Román,Yves Auad,Lucas Grasso,Fernando Alvarez,Ingrid David Barcelos,Luiz Fernando Zagonel

DOI: https://doi.org/10.1039/D0NR03400B

2022-10-05

Abstract:We have studied the excitonic properties of exfoliated tungsten diselenide (WSe$_2$) monolayers transferred to gold substrates using the tunneling current in a Scanning Tunneling Microscope (STM) operated in air to excite the light emission locally. In obtained spectra, emission energies are independent of the applied bias voltage and resemble photoluminescence (PL) results, indicating that, in both cases, the light emission is due to neutral and charged exciton recombination. Interestingly, the electron injection rate, that is, the tunneling current, can be used to control the ratio of charged to neutral exciton emission. The obtained quantum yield in the transition metal dichalcogenide (TMD) is $~5x10^{-7}$ photons per electron. The proposed excitation mechanism is the direct injection of carriers into the conduction band. The monolayer WSe$_2$ presents bright and dark defects spotted by STM images performed under UHV. STS confirms the sample as p-doped, possibly as a net result of the observed defects. The presence of an interfacial water layer decouples the monolayer from the gold support and allows excitonic emission from the WSe$_2$ monolayer. The creation of a water layer is an inherent feature of the sample transferring process due to the ubiquitous air moisture. Consequently, vacuum thermal annealing, which removes the water layer, quenches excitonic luminescence from the TMD. The tunneling current can locally displace water molecules leading to excitonic emission quenching and to plasmonic emission due to the gold substrate. The present findings extend the use and the understanding of STM induced light emission (STM-LE) on semiconducting TMDs to probe exciton emission and dynamics with high spatial resolution.

Optics,Materials Science
Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers

Ricardo Javier Peña Román,Yves Auad,Lucas Grasso,Fernando Alvarez,Ingrid David Barcelos,Luiz Fernando Zagonel

DOI: https://doi.org/10.1039/d0nr03400b

IF: 6.7

2020-07-02

Nanoscale

Abstract:We have studied the excitonic properties of exfoliated tungsten diselenide (WSe2) monolayers transferred to gold substrates using the tunneling current in a Scanning Tunneling Microscope (STM) operated in air to excite the light emission locally. In obtained spectra, emission energies are independent of the applied bias voltage and resemble photoluminescence (PL) results, indicating that, in both cases, the light emission is due to neutral and charged exciton recombination. Interestingly, the electron injection rate, that is, the tunneling current, can be used to control the ratio of charged to neutral exciton emission. The obtained quantum yield in the transition metal dichalcogenide (TMD) is ∼5 × 10-7 photons per electron. The proposed excitation mechanism is the direct injection of carriers into the conduction band. The monolayer WSe2 presents bright and dark defects spotted by STM images performed under UHV. STS confirms the sample as p-doped, possibly as a net result of the observed defects. The presence of an interfacial water layer decouples the monolayer from the gold support and allows excitonic emission from the WSe2 monolayer. The creation of a water layer is an inherent feature of the sample transferring process due to the ubiquitous air moisture. Consequently, vacuum thermal annealing, which removes the water layer, quenches excitonic luminescence from the TMD. The tunneling current can locally displace water molecules leading to excitonic emission quenching and to plasmonic emission due to the gold substrate. The present findings extend the use and the understanding of STM induced light emission (STM-LE) on semiconducting TMDs to probe exciton emission and dynamics with high spatial resolution.
Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Xi Yang,Zhihong Zhu,Fang Luo,Guang Wang,Gang Peng,Mengjian Zhu,Shiqiao Qin

DOI: https://doi.org/10.1021/acsami.1c13096

2021-09-29

Abstract:Two-dimensional semiconductors exhibit strong light emission under optical or electrical pumping due to quantum confinement and large exciton binding energies. The regulation of the light emission shows great application potential in next-generation optoelectronic devices. Herein, by the physical vapor deposition strategy, we synthesize monolayer hexagonal-shaped WS2, and its photoluminescence intensity mapping show three-fold symmetric patterns with alternating bright and dark regions. Regardless of the length of the edges, all domains with S-terminated edges show lower photoluminescence intensity, while all regions with W-terminated edges exhibit higher photoluminescence intensity. The photoluminescence segmentation mechanism is studied in detail by employing Raman spectroscopy, atomic force microscopy, high-resolution transmission electron microscopy, and Kelvin probe force microscopy, and it is found to originate from different strain distributions in the S-terminated region and the W-terminated region. The optical band gap determined by the photoluminescence in the dark region is ∼2 meV lower than that in the bright region, implying that more strain is stored in the S-terminated region than in the W-terminated region. The photoluminescence segmentation vanishes in transferred hexagonal-shaped WS2 from the initial substrate to a fresh silicon substrate, further confirming the physical mechanism. Our results provide guidance for tuning the optical properties of two-dimensional semiconductors by controllable strain engineering.
Exciton Aggregation Induced Photoluminescence Enhancement of Monolayer WS2

Guanghui Cheng,Baikui Li,Chunyu Zhao,Zijing Jin,Hui Li,Kei May Lau,Jiannong Wang

DOI: https://doi.org/10.1063/1.5096206

IF: 4

2019-01-01

Applied Physics Letters

Abstract:Defect mediated nonradiative recombination limits the photoluminescence (PL) quantum yield of transition metal dichalcogenide monolayers (MLs). In this work, the enhancement of the PL intensity of ML WS2 is reported in a van der Waals heterostructure of WS2 ML and InGaN quantum dots (QDs) under excitation with photon energy larger than the bandgaps of both WS2 and QDs. The mechanism of this PL enhancement is due to the aggregation of excitons in WS2 ML toward the QD sites to form an interfacial bound state, which effectively mitigates the influence of defects. This exciton aggregation induced enhancement of PL intensity is more pronounced at low temperatures and under low power excitations. The lifetime and diffusion coefficient of the excitons in WS2 ML are also measured to validate the aggregation scenario.
Photoluminescence Enhancement of Monolayer WS2 by n-Doping with an Optically Excited Gold Disk

Bayarjargal N Tugchin,Nathan Doolaard,Angela I Barreda,Zifei Zhang,Anastasia Romashkina,Stefan Fasold,Isabelle Staude,Falk Eilenberger,Thomas Pertsch

DOI: https://doi.org/10.1021/acs.nanolett.3c03053

2023-12-13

Abstract:In nanophotonics and quantum optics, we aim to control and manipulate light with tailored nanoscale structures. Hybrid systems of nanostructures and atomically thin materials are of interest here, as they offer rich physics and versatility due to the interaction between photons, plasmons, phonons, and excitons. In this study, we explore the optical and electronic properties of a hybrid system, a naturally n-doped monolayer WS2 covering a gold disk. We demonstrate that the nonresonant excitation of the gold disk in the high absorption regime efficiently generates hot carriers via localized surface plasmon excitation, which n-dope the monolayer WS2 and enhance the photoluminescence emission by regulating the multiexciton population and stabilizing the neutral exciton emission. The results are relevant to the further development of nanotransistors in photonic circuits and optoelectronic applications.
Low temperature photoresponse of monolayer tungsten disulphide

bingchen cao,xiaonan shen,jingzhi shang,chunxiao cong,weihuang yang,mustafa eginligil,ting yu

DOI: https://doi.org/10.1063/1.4900816

IF: 6.6351

2014-01-01

APL Materials

Abstract:High photoresponse can be achieved in monolayers of transition metal dichalcogenides. However, the response times are inconveniently limited by defects. Here, we report low temperature photoresponse of monolayer tungsten disulphide prepared by exfoliation and chemical vapour deposition (CVD) method. The exfoliated device exhibits n-type behaviour; while the CVD device exhibits intrinsic behaviour. In off state, the CVD device has four times larger ratio of photoresponse for laser on/off and photoresponse decay-rise times are 0.1 s (limited by our setup), while the exfoliated device has few seconds. These findings are discussed in terms of charge trapping and localization. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Qilong Cui,Ziyu Luo,Qirui Cui,Wen Zhu,Hongwei Shou,Chuanqiang Wu,Zhanfeng Liu,Yunxiang Lin,Pengjun Zhang,Shiqiang Wei,Hongxin Yang,Shuangming Chen,Anlian Pan,Li Song

DOI: https://doi.org/10.1002/adfm.202105339

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS2) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS2 lattice via the CVD method, oxygen doped WS2 monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.
Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Yu-Han Wang,Hsin-Mei Ho,Xuan-Long Ho,Li-Syuan Lu,Shang-Hsien Hsieh,Shuei-De Huang,Hsiang-Chih Chiu,Chia-Hao Chen,Wen-Hao Chang,Jonathon David White,Yu-Hui Tang,Wei-Yen Woon

DOI: https://doi.org/10.1021/acsanm.1c02265

IF: 6.14

2021-10-22

ACS Applied Nano Materials

Abstract:The dominant defect types in chemical-vapor-deposited (CVD) tungsten disulfide (WS2) monolayers (ML) were regulated through mask-assisted scattered-oxygen-ion (O+) implantation. A shadow mask allowed for two distinctive implantation regions: directly bombarded and mask-shaded. Upon direct implantation, photoluminescence (PL) was universally suppressed, whereas in the mask-shaded region, PL was enhanced by up to 500% at low doses before suppression at doses of >3 × 1013 ions/cm2. We verified that the introduction of scattered O+ ions and low-density structural atomic defects are the two prerequisites for PL enhancement by replacing O+ ions with C+ ions and eliminating the involvement of physisorbed gases or laser treatment. Density functional theory calculations were carried out, suggesting a possible mechanism for the vacancy-induced dangling bonds in WS2. Sulfur- or tungsten-related vacancies create in-gap deep trap states, hindering electron–hole recombination. Scattered-oxygen treatment passivates these sulfur vacancies by effectively eliminating these in-gap nonradiative pathways. In addition, it further increases the transition probability by creating more tungsten-dominated states near the conduction band edge through charge transfer. This work demonstrates a facile and successful single-step method to passivate sulfur vacancies with scattered oxygen ions. It has the potential to heal the PL quenching that originated from the intrinsic high defect density in a CVD-grown WS2 ML.

materials science, multidisciplinary,nanoscience & nanotechnology
Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

Qilong Cui,Ziyu Luo,Qirui Cui,Wen Zhu,Hongwei Shou,Chuanqiang Wu,Zhanfeng Liu,Yunxiang Lin,Pengjun Zhang,Shiqiang Wei,Hongxin Yang,Shuangming Chen,Anlian Pan,Li Song

DOI: https://doi.org/10.1002/adfm.202105339

IF: 19

2021-07-04

Advanced Functional Materials

Abstract:The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS2) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS2 lattice via the CVD method, oxygen doped WS2 monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping Against Tungsten Vacancy Formation

Hongquan Zhao,Guoxing Zhang,Bing Yan,Bo Ning,Chunxiang Wang,Yang Zhao,Xuan Shi

DOI: https://doi.org/10.34133/2022/9840970

IF: 11

2022-01-01

Research

Abstract:Doping in 2D materials is an important method for tuning of band structures. For this purpose, it is important to develop controllable doping techniques. Here, we demonstrate a substitutional doping strategy by erbium (Er) ions in the synthesis of monolayer WS 2 by chemical vapor deposition. Substantial enhancements in photoluminescent and photoresponsive properties are achieved, which indicate a tungsten vacancy suppression mechanism by Er filling. Er ion doping in the monolayer WS 2 is proved by X-ray diffraction (XRD) and X-ray photoelectron spectra (XPS), fluorescence, absorption, excitation, and Raman spectra. 11.5 at% of the maximum Er concentration is examined by energy dispersive X-ray spectroscopy (EDX). Over 6 times enhancement of intensities with 7.9 nm redshift in peaks are observed from the fluorescent spectra of Er-doped WS 2 monolayers compared with their counterparts of the pristine WS 2 monolayers, which agrees well with the density functional theory calculations. In addition, over 11 times of dark current, 469 times of photocurrents, photoresponsivity, and external quantum efficiency, and two orders of photoresponse speed are demonstrated from the Er-doped WS 2 photodetector compared with those of the pristine WS 2 device. Our findings prove rare-earth doping in 2D materials, the exciting and ideal technique for substantially enhanced photoluminescent and photoresponsive properties.
Tunable Photoluminescence in WS2/WO3 Monolayer/Nanoparticles Hybrid Structure

Lei Tao,Shudong Zhao,Peng Miao,Jianxin Yu,Xianjie Wang,Yi Wang,Zhiguo Liu,Bingsheng Li,Yang Wang,Yu Sui

DOI: https://doi.org/10.1002/pssr.201700371

2018-01-01

Abstract:Photoluminescence (PL) of WS2 monolayer has attracted attention triggered by potential optoelectronic and photoelectric applications due to the largest direct band gap in WS2 monolayer among transition metal dichalcogenides. The PL of WS2 monolayer is dominated by charged excitons (trions) and bound excitons, which suppress the luminescence of free excitons. Herein, we report a one-step growth of a nanosheet/nanoparticles hybrid structure to reduce the emission of bound excitons and trions in WS2 monolayer by surface passivation with WO3 nanoparticles. Peak positions of the PL spectra in WS2 monolayers depend on the density of WO3 nanoparticles on their surface. With increasing density of WO3 nanoparticles, the PL of WS2 monolayers experiences the transition from bound excitons and charged excitons (trions) to neutral excitons. These results suggest that the engineering of PL of WS2 monolayers may be realized by surface passivation using nanoparticles of wide band gap semiconductors.

Photoinduced Doping and Photoluminescence Signature in an Exfoliated Ws2 Monolayer Semiconductor

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Photoinduced doping in monolayer WSe 2 transistors

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Photoluminescence Inhomogeneity and Excitons in CVD-grown Monolayer WS2

Tunneling-current-induced local excitonic luminescence in p-doped WSe$_2$ monolayers

Tunneling-current-induced local excitonic luminescence in p-doped WSe2 monolayers

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Exciton Aggregation Induced Photoluminescence Enhancement of Monolayer WS2

Photoluminescence Enhancement of Monolayer WS2 by n-Doping with an Optically Excited Gold Disk

Low temperature photoresponse of monolayer tungsten disulphide

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping Against Tungsten Vacancy Formation

Tunable Photoluminescence in WS2/WO3 Monolayer/Nanoparticles Hybrid Structure