Abstract:Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

Low temperature photoresponse of monolayer tungsten disulphide

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Photoconduction Properties in Tungsten Disulfide Nanostructures

Photoinduced Doping and Photoluminescence Signature in an Exfoliated Ws2 Monolayer Semiconductor

Gas pressure-sensitive regulation of exciton state of monolayer tungsten disulfide

Optical response of monolayer, few-layer and bulk tungsten disulfide

High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors.

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Exciton, trion and localized exciton in monolayer Tungsten Disulfide

The optical response of monolayer, few-layer and bulk tungsten disulfide

High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide

Low-temperature open-atmosphere growth of WO3 thin films with tunable and high-performance photoresponse

Large-area synthesis of monolayer WS₂ and its ambient-sensitive photo-detecting performance.

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

High‐Performance Planar Field‐Emission Photodetector of Monolayer Tungsten Disulfide with Microtips

Probing the Electronic and Opto-Electronic Properties of Multilayer MoS2 Field-Effect Transistors at Low Temperatures

Transient Photoconductivity and Free Carrier Dynamics in a Monolayer WS2 Probed by Time Resolved Terahertz Spectroscopy.

Probing Excitonic Dark States in Single-layer Tungsten Disulfide