Abstract:2D layered materials, such as graphene and transition metal dichalcogenides (TMDs), have aroused great interest during the last decade because of their extraordinary properties for both fundamental physics and promising potential applications.[1–16] Though graphene has very high mobility, there is a key bottleneck for graphene-based transistors that its on-off ratio is very small due to the inherent gapless band structure of graphene.[1,17] Superior to graphene, monolayer (1L) TMDs with native direct bandgaps in the visible and near-infrared range have begun to attract increasing attention as 2D semiconductors. TMDs with common formula MX2 (M = Mo, W; X = S, Se), as representative prototype systems of 2D semiconductors, have been widely and intensively studied. Among them, 1L tungsten disulfide (WS2) is attracting a growing interest due to 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both fundamental physics and many promising applications such as light emitters, photodetectors/sensors, valleytronics, and flexible nanoelectronics, due to its fascinating optical, electronic, and mechanical properties. Herein, basic exciton properties of monolayer WS2 are reviewed including neutral excitons, charged excitons, bounded excitons, biexcitons, and the effects of electrostatic gating, chemical doping, strain, magnetic field, circular polarized light, and substrate on these excitonic structures. Besides basic excitonic emission, single-photon emission, exciton–polaritons, and stimulated emission in monolayer WS2 are also discussed. The understanding of these optical phenomena is critical for the development of potential optical applications in electronic and optoelectronic devices. Finally, a summary and future prospective of the challengers and developments regarding 2D semiconductor WS2 is presented. 2D Semiconductors

The optical response of monolayer, few-layer and bulk tungsten disulfide

Optical response of monolayer, few-layer and bulk tungsten disulfide

Terahertz Response of Monolayer and Few-Layer WTe_2 at the Nanoscale

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Low temperature photoresponse of monolayer tungsten disulphide

Substrate Dependent Terahertz Response of Monolayer WS2

Influence of direct deposition of dielectric materials on the optical response of monolayer WS 2

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Exciton, trion and localized exciton in monolayer Tungsten Disulfide

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Excitonic resonances in thin films of WSe2: From monolayer to bulk material

Optical manipulation of the exciton charge state in single layer tungsten disulfide

Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure

Ultrafast Coherent Exciton Couplings and Many-Body Interactions in Monolayer WS 2

Optical Signature of Symmetry Variations and Spin-Valley Coupling in Atomically Thin Tungsten Dichalcogenides

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Optical Properties of 2D Semiconductor WS2

Optically Triggered Emergent Mesostructures in Monolayer WS 2

Photoconduction Properties in Tungsten Disulfide Nanostructures

Spatial Non-Uniformity in Exfoliated WS2 Single layers