Abstract:Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

Optical manipulation of the exciton charge state in single layer tungsten disulfide

Optical control of charged exciton states in tungsten disulfide

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

All-optical reversible manipulation of exciton and trion emissions in monolayer WS2

Exciton, trion and localized exciton in monolayer Tungsten Disulfide

Exciton manifolds in highly ambipolar doped WS2

Identification of excitons, trions and biexcitons in single-layer WS2

Ultrathin WS2‐on‐Glass Photonic Crystal for Self‐Resonant Exciton‐Polaritonics

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Optical response of monolayer, few-layer and bulk tungsten disulfide

Large Range Manipulation of Exciton Species in Monolayer WS2

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Versatile optical manipulation of trions, dark excitons and biexcitons through contrasting exciton-photon coupling

Electrical control of valley polarized charged biexcitons in monolayer WS$_2$

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Direct Observation of Strong Light-Exciton Coupling in Thin WS_2 Flakes

Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2.

Observation of In-Plane Exciton–polaritons in Monolayer WSe2 Driven by Plasmonic Nanofingers