Abstract:Monolayer transition‐metal dichalcogenides grown by chemical vapor deposition (CVD) always contain certain types of defects that dramatically affect their electronic and optical properties. For CVD‐grown hexagonal WS2 monolayer, complex photoluminescence (PL) patterns are commonly observed, but the defect‐related optical mechanisms are still not well understood. Here, by combining the optical and structural characterizations and ab initio calculations, the correlation between the patterned PL emission and the details of defects in CVD‐grown hexagonal WS2 monolayer are revealed. The temperature‐dependent PL spectra show the correlation between the defect‐trapped and band‐edge exciton emission. The high‐resolution scanning transmission electron microscopy identifies the positive correlation between the density of WSx‐vacancy and PL intensity. In the end, the ab initio calculations and molecule adsorption PL spectra show that the coexistence of p‐ and n‐doping effects, caused by the W and S complex vacancy, weakens the modulation of molecular adsorption on PL intensity. This work gives new insights into the origin of the inhomogeneous PL distribution in WS2 monolayer, which provides important guidance in the regulation of electronic and optical properties of transition‐metal dichalcogenides via defect engineering. The chemical vapor deposition‐grown hexagonal WS2 monolayer always exhibits alternating bright and dark photoluminescence domains. The correlation between the patterned photoluminescence emission and the details of defects is explored consistently by experiments and density functional theory calculations. The results indicate that the WS‐vacancy is the most likely vacancy that matters.

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition

Promoting the yield and crystallinity of synthetic WS2 via precursor pretreatment

Photoinduced Doping and Photoluminescence Signature in an Exfoliated Ws2 Monolayer Semiconductor

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Photoluminescence and Raman mapping characterization of WS2 monolayers prepared using top-down and bottom-up methods

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Extraordinary room-temperature photoluminescence in WS2 monolayers

Instability and Protection of Monolayer WS2 under Heating and Corona Discharge Conditions

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Optical control of charged exciton states in tungsten disulfide

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide