Abstract:2D materials with tailored morphologies exhibit distinctive shape-dependent properties especially in electrocatalysis and gas sensing, extending their applications in nanoelectronics. Atomic-layer tungsten disulfide (WS2) stands out as a promising candidate, but the controllable synthesis of WS2 still faces unavoidable obstacles, such as strict parameter requirements, low efficiency and serious pollution during the preparation. Here we report an elegant technique for growing homogeneous-luminescence WS2 monolayer with desired shapes and developed electrochemical properties, through the improved chemical vapor deposition method with a semi-closed airflow environment. It is an effective, economic and especially environment-friendly approach with atmospheric pressure and hydrogen-free condition, aiming at synthesizing high-quality and large-scale monolayer WS2 crystals with only one heating zone. Compared with the existing methods, this one significantly minimizes the sulphur contamination to the environment and equipment, enabling the reuse of quartz tube and reducing the cost. More importantly, different shapes of WS2 domains with high crystalline and excellent homogeneity of luminescent intensity are controllable by adjusting the growth temperatures. In addition to the good electrical transport performance of WS2 monolayer, the WS2 domains with different morphologies exhibit modulated properties for catalyzing the electrochemical hydrogen evolution. This systematic study on shape-controlled growth and shape-dependent electrochemical performances of WS2 will further push forward their practical applications.

Promoting the yield and crystallinity of synthetic WS2 via precursor pretreatment

Effects of precursor pre-treatment on the vapor deposition of WS2 monolayers

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Facile Access to Shape-Controlled Growth of WS2 Monolayer Via Environment-Friendly Method

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Tunable Photoluminescence in WS2/WO3 Monolayer/Nanoparticles Hybrid Structure

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Insight into the Role of H 2 in WS 2 Growth by Chemical Vapor Deposition

Rational Design for High-Yield Monolayer WS2films in Confined Space under Fast Thermal Processing.

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

WS2 with Controllable Layer Number Grown Directly on W Film

Controlling sulphur precursor addition for large single crystal domains of WS 2

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Controlled preparation of high quality WS2 nanostructures by a microwave-assisted solvothermal method

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

High‐performance Electronics and Optoelectronics of Monolayer Tungsten Diselenide Full Film from Pre‐seeding Strategy

Further insights into the Na<sub>2</sub>WO<sub>4</sub>-assisted synthesis method for WS<sub>2</sub>