Abstract:The unique structural and physical properties of two-dimensional (2D) atomic layer semiconductors render them promising candidates for electronic or optoelectronic devices. However, the lack of efficient and stable approaches to synthesize large-area thin films with excellent uniformity hinders their realistic applications. In this work, we reported a method involving atomic layer deposition and a chemical vapor deposition chamber to produce few-layer 2H-MoSe2 thin films with wafer-level uniformity. The reduction of MoO3 was found indispensable for the successful synthesis of MoSe2 films due to the low vaporization temperature. Moreover, a metal-semiconductor-metal photodetector (PD) was fabricated and investigated systematically. We extracted an ultrahigh photoresponsivity approaching 101 A/W with concomitantly high external quantum efficiency up to 19,668% due to the produced gain arising from the holes trapped at the metal/MoSe2 interface, the band tail state contribution, and the photogating effect. A fast response time of 22 ms was observed and attributed to effective nonequilibrium carrier recombination. Additionally, the ultrahigh photoresponsivity and low dark current that originated from Schottky barrier resulted in a record-high specific detectivity of up to 2×1013 Jones for 2D MoSe2/MoS2 PDs. Our findings revealed a pathway for the development of high-performance PDs based on 2D MoSe2 that are inexpensive, large area, and suitable for mass production and contribute to a deep understanding of the photoconductivity mechanisms in atomically thin MoSe2. We anticipate that these results are generalizable to other layer semiconductors as well.

Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting.

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Large-Area Monolayer MoS<sub>2</sub> Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Large-Area Monolayer MoS 2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

Synthesis of Few-Layer 2H-Mose2 Thin Films with Wafer-Level Homogeneity for High-Performance Photodetector

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Van der Waals integration inch-scale 2D MoSe2 layers on Si for highly-sensitive broadband photodetection and imaging

Quasi-Van der Waals Epitaxial Growth of γ'-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

Light-emitting devices based on atomically thin MoSe 2

Lateral Heterojunctions Within Monolayer Semiconductors

Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors

Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride