Abstract:Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.

Enhancing photoluminescence of WSe2 in vapor grown WSe2/VOCl bilayer heterojunctions via surface passivation

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance

Few-layer WSe 2 Lateral Homo-and Hetero-Junctions with Superior Optoelectronic Performance by Laser Manufacturing

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Charge-Transfer-Induced Photoluminescence Properties of WSe2 Monolayer-Bilayer Homojunction.

Ultra‐Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances

Enhanced Photoluminescence of WS2/WO3 Heterostructural QDs

Tunable Photoluminescence in WS2/WO3 Monolayer/Nanoparticles Hybrid Structure

Directly Seeding Epitaxial Growth of Tungsten Oxides/tungsten Diselenide Mixed-Dimensional Heterostructures with Excellent Optical Properties

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Enhancement of direct and indirect exciton emissions in few-layer WSe2 at high temperatures

Sustained Robust Exciton Emission in Suspended Monolayer WSe_2 within the Low Carrier Density Regime for Quantum Emitter Applications

Sustained robust exciton emission in suspended monolayer WSe2 within the low carrier density regime for quantum emitter applications

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Thickness-Dependent Excitonic Properties of WSe2/FePS3 van der Waals Heterostructures

Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe2 Homojunction.

Exciton spectroscopy and unidirectional transport in MoSe 2 -WSe 2 lateral heterostructures encapsulated in hexagonal boron nitride

Optical response of WSe$_2$-based vertical tunneling junction

Dual‐channel Type Tunable Field‐effect Transistors Based on Vertical Bilayer WS2(1 − X)se2x/sns2 Heterostructures