Abstract:Metal monochalcogenide GaSe is a classic layered semiconductor that has received increasing research interest due to its highly tunable electronic and optical properties for ultrathin electronics applications. Despite intense research efforts, a systematic understanding of the layer-dependent electronic and optical properties of GaSe remains to be established, and there appear significant discrepancies between different experiments. We have performed GW plus Bethe-Salpeter equation (BSE) calculations for few-layer and bulk GaSe, aiming at understanding the effects of interlayer coupling and dielectric screening on excited state properties of GaSe, and how the electronic and optical properties evolve from strongly two-dimensional (2D) like to intermediate thick layers, and to three-dimensional (3D) bulk character. Using a new definition of the exciton binding energy, we are able to calculate the binding energies of all excitonic states. Our results reveal an interesting correlation between the binding energy of an exciton and the spread of its wave function in the real and momentum spaces. We find that the existence of (nearly) parallel valence and conduction bands facilitates the formation of excitonic states that spread out in the momentum space. Thus, these excitons tend to be more localized in real space and have large exciton binding energies. The interlayer coupling substantially suppresses the Mexican-hat-like dispersion of the top valence band seen in monolayer system, explaining the greatly enhanced photoluminescence (PL) as layer thickness increases. Our results also help resolve apparent discrepancies between different experiments. After including the quasiparticle and excitonic effects as well the optical activities of excitons, our results compare well with available experimental results.

Enhanced and modulated optical response of GaSe by coupling with resonant linear Bragg gratings

Polarization-Controllable Plasmonic Enhancement on the Optical Response of Two-Dimensional GaSe Layers.

Strain Manipulation of the Polarized Optical Response in Two-Dimensional GaSe Layers

Enhanced vertical second harmonic generation from layered GaSe coupled to photonic crystal circular Bragg resonators

Interference Effect on Photoluminescence Intensity in GaSe Up to 200 Layers

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Quasiparticle and Excitonic Structures of Few-layer and Bulk GaSe: Interlayer Coupling, Self-energy, and Electron-hole Interaction

P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by Van Der Waals Epitaxy for Photoresponse Modulation.

Broadband Nonlinear Optical Response in GeSe Nanoplates and Its Applications in All-Optical Diode

Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

Bound Exciton and Free Exciton States in GaSe Thin Slab

High Carrier Mobility and Broad Spectrum GaSe/SnSe Van Der Waals Heterostructure Optoelectronic Devices: First-principles Study

Linearly polarized remote-edge luminescence in GaSe nanoslabs

Enhancing Light Emission Efficiency Without Color Change in Post-Transition Metal Chalcogenides

Enhancing photoluminescence of WSe2 in vapor grown WSe2/VOCl bilayer heterojunctions via surface passivation

Strong Second-Harmonic Generation in Atomic Layered GaSe

Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures

Lab‐on‐Fiber Based on Optimized Gallium Selenide for Femtosecond Mode‐Locked Lasers and Fiber‐Compatible Photodetectors

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Enhanced Photoluminescence of Strained Ge with a Δ-Doping SiGe Layer on Silicon and Silicon-on-insulator