Abstract:Graphene and other layered materials, such as transition metal dichalcogenides, have rapidly established themselves as exceptional building blocks for optoelectronic applications because of their unique properties and atomically thin nature. The ability to stack them into van der Waals (vdWs) heterostructures with new functionality has opened a new platform for fundamental research and device applications. Nevertheless, near-infrared (NIR) photodetectors based on layered semiconductors are rarely realized. In this work, we fabricate a graphene-MoTe2-graphene vertical vdWs heterostructure on a SiO2/p+-Si substrate by a facile and reliable site-controllable transfer method and apply it for photodetection from the visible to NIR wavelength range. Compared to the layered semiconductor photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has a superior performance, including high photoresponsivity (∼110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE; ∼12.9% at 1064 nm and ∼53.8% at 473 nm), rapid response and recovery processes (a rise time of 24 μs and a fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. We have employed scanning photocurrent microscopy to investigate the photocurrent generation in this heterostructure under various back-gate voltages and found that the two Schottky barriers between the graphenes and MoTe2 play an important role in the photocurrent generation. In addition, the vdWs heterostructure has a uniform photoresponsive area. The photoresponsivity and EQE of the photodetector can be modulated by the back-gate (p+-Si) voltage. We compared the responsivities of thin and thick flakes and found that the responsivity had a strong dependence on the thickness. The heterostructure has promising applications in future novel optoelectronic devices, enabling next-generation high-responsivity, high-speed, flexible, and transparent NIR devices.

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Highly Sensitive Visible to Infrared MoTe2photodetectors Enhanced by the Photogating Effect

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Surface Plasmon-Enhanced Photodetection in MoTe2 Phototransistors with Au Nanoparticles

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2

Ultrasensitive Near‐Infrared MoTe2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens

Enhanced Photoresponsivity and Hole Mobility of MoTe2 Phototransistors by Using an Al2O3 High-Κ Gate Dielectric

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Gate‐Tunable Photovoltaic Effect in MoTe 2 Lateral Homojunction

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical Van Der Waals Heterostructure.

Overall High-Performance Near-Infrared Photodetector Based on CVD-Grown MoTe<sub>2</sub> and Graphene Vertical vdWs Heterostructure

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Enhanced sensitivity of MoS2:Er-based flexible near-infrared photodetectors via tellurium-induced interfacial charge transfer

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Diverse modes regulated photoresponse and high-resolution imaging based on van der Waals semimetal PtTe2/semiconductor MoTe2 junctions