Impact of Switching Window on Endurance Degradation in Analog RRAM

Meiran Zhao,Huaqiang Wu,Bin Gao,Yuyi Liu,Peng Yao,Yue Xi,Wei Wu,Xinyi Li,Qingtian Zhang,Ning Deng,He Qian

DOI: https://doi.org/10.1109/edtm.2019.8731109

2019-01-01

Abstract:Analog RRAM is attractive for realizing high-density storage and in-memory computing. The endurance requirements of analog type resistive switching are different from binary type switching. In this work, endurance degradation behavior of analog RRAM is studied. It is found that the endurance lifetime would increase as the window decreasing. Higher resistance state has more significant influence on the endurance degradation. Physical mechanism for endurance is elucidated to explain the reason for the impact of switching window on the endurance lifetime.