Abstract:Al2O3 thin films were deposited on silicon (100) and tin-doped indium oxide (ITO) substrates by twin targets reactive high power impulse magnetron sputtering (TTR-HiPIMS). Effects of the substrate bias voltage (V-b) on microstructure, surface morphology, chemical composition and optical transmittance of the deposited films were investigated by grazing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS) and Ultra violet-visible-near infrared (UV-visible-NIR) spectra, respectively. The AFM scans showed that increasing the bias voltage (V-b) from 0 to -40 V caused the weakly crystalline film to evolve into fully crystalline Al2O3 film at temperatures as low as 230 degrees C. However, when V(b )reached - 60 V, the crystallinity decreased. This result was also confirmed by GIXRD patterns, which showed that the best crystallinity of Al2O3 in gamma phase was obtained for film deposited at a bias of -40 V. Besides, with the increase of V-b, the deposition rate decreased from 88 to 70 nm/h, and the O/Al ratio of the as-deposited films reduced from 1.53 to 1.44. The binary collision approximation (BCA) Monte-Carlo code SDTrimSP was also used to calculate the sputter yield of Al and Al2O3 . It was found that the sputter yield of Al2O3 was about 1/8 of Al, which is supposed to be one of the main reasons for the observed low deposition rate. UV-vis-NIR transmittance spectra of Al2O3 films deposited under different bias voltages were evaluated after deposition on ITO substrates. The results revealed that all the as-deposited films had high optical transmittance (approximate to 80%) in the wavelength range of 200-800 nm. Moreover, a marginal decrease of the transmittance was also observed with increasing V-b.

Effect of Bias Voltage on Microstructure and Optical Properties of Al2O3 Thin Films Prepared by Twin Targets Reactive High Power Impulse Magnetron Sputtering

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