Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Improved Carrier Doping Strategy Of Monolayer Mos2 Through Two-Dimensional Solid Electrolyte Of Ybr3

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Effective Carrier Doping and Quantum Capacitance Manipulation of Graphene Through Two-Dimensional Solid Electrolytes of ScI3 and YBr3

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Controlled p-Type Doping of MoS2 Monolayer by Copper Chloride

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

Enhancing the Carrier Transport in Monolayer MoS2 Through Interlayer Coupling with 2D Covalent Organic Frameworks

Substitutional doping at S site of MoS2/G heterostructure: The influence on voltage-current and electronic characteristics

First Principles Study on Molecule Doping in MoS2 Monolayer

High carrier mobility in organic cations intercalated multilayer MoS2

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping

Ab-initio study on the possible doping strategies for MoS$_2$ monolayers

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Nonvolatile N-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating.