Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Atomic Configurations of Basal Stacking Faults and Dislocation Loops in GaN Irradiated with Xe20+ Ions at Room Temperature

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Zn-dopant dependent defect evolution in GaN nanowires

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown M‐plane GaN Substrate

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metalorganic chemical vapor deposition

Effects of Ion Irradiation and Temperature on Mechanical Properties of GaN Single Crystals under Nanoindentation

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Theoretical Study about the Formation of the Stacking Faults in GaN Nanowires along Different Growth Directions

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

A refined numerical simulation approach to assess the neutron irradiation effect on the mechanical behavior of wurtzite GaN

Radiation-induced defects in the InGaN/GaN superlattice structure

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces