Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

Hybrid 1T E-Dram and E-Nvm Realized in One 10 Nm Node Ferro FinFET Device with Charge Trapping and Domain Switching Effects

105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications

A Novel High-Endurance FeFET Memory Device Based on ZrO 2 Anti-Ferroelectric and IGZO Channel

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

10 5 × Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

A 9mb HZO-Based Embedded FeRAM with 10-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.

A ferroelectric fin diode for robust non-volatile memory

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Logic Compatible High-Performance Ferroelectric Transistor Memory

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

HfO 2 -based Junctionless FeFET Array on FDSOI Platform for NAND Memory Application

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs