Abstract:Thanks to its intrinsic high mobilities for carriers i.e. 3900 and 1900 cm 2 V -1 s -1 for holes and electrons respectively, Ge has resurged as an alternative channel material for metal-oxide-semiconductor field-effect transistors (MOSFETs) [1]. To realize the-state-of-the-art high-performance Ge devices, the formation of highly activated shallow junctions especially n-type junction as well as the large contact specific contact resistivity (ρ c ), however, are still great challenges remained to be resolved, in spite of numerous efforts spent in the past decade [2, 3]. Impurity species such as carbon (C), nitrogen (N) and fluorine (F) are utilized to suppress the rapid diffusion of phosphorus in Ge by trapping vacancies [4, 5], while at the expense of a reduced activation level usually. Specifically, in this paper, the impact of C implantation parameters (energy and dose) on the diffusion and activation of P in Ge pre-amorphized (PAI) germanium epitaxial layers on Si (100), is systematically explored. All samples received a Ge PAI at 20 keV, 6×10 14 at/cm 2 , followed by C implantation at different energies ranging from 3 keV to 20 keV and doses varying from 5×10 14 to 2×10 1 5 at/cm 2 . P was implanted with a fixed condition using an energy of 5 keV and dose of 2×10 1 5 at/cm 2 and was completely contained in the amorphous Ge layer. During annealing, to prevent out-diffusion of the implanted dopants, all samples were capped with a 20 nm thick SiO 2 deposited by plasma enhanced chemical vapor deposition (PECVD) at 280 o C. The annealing process was carried out in N 2 ambient at 600 o C for 60 s. It is illustrated in Fig. 1a that the shallowest N-type junction occurs for C implantation at 8 keV with a dose of 1×10 15 cm -2 . This optimum condition can be ascribed to the carbon distribution shown in Fig. 1b that carbon atoms straddles the amorphous/crystal (a/c) interface. As a result, both the diffusion of P in the amorphous layer and in the Ge virtual substrate beyond the a/c interface can be effectively suppressed. Except the control of P diffusion, the specific contact resistivity (ρ c ) between NiGe and n-Ge by the presence of C is also investigated. As illustrated in Fig. 2, the thermal stability of NiGe films is obviously enhanced by the presence of C and this can be inferred by the decreasing sheet resistance till 600 o C and the pretty smooth NiGe/Ge interface for samples with C. At 500 o C germanidation temperature, the r c values are reduced from 1.1×10 -4 Ω-cm 2 and 2.9×10 -5 Ω-cm 2 for NiGe/n- and p-Ge contacts without carbon to 7.3×10 -5 Ω-cm 2 and 1.4×10 -5 Ω-cm 2 for their counterparts with carbon, respectively, as illustrated in Fig. 3 and 4. References [1] Y. Kamata, Mater. Today , vol. 11, issue 1-2, pp. 30-38, Jan. 2008 [2] J. Vanhellemont and E. Simoen, Mater. Sci. Semicond. Process. , vol.15, 642 (2012). [3] M. Shayesteh, C. L. L. M. Daunt, D. O¢Connell, V. Djara, M. White, B. Long, and R. Duffy, IEEE Trans. Electron Devices, vol. 58, no. 11, pp. 3801-3807, Nov. 2011 [4] E. Simoen, M. Schaekers, J. Liu, J. Luo, C. Zhao, K. Barla and N. Collaert, to be published in E-MRS proc., 2016. [5] J. B. Liu, J. Luo, E. Simoen, Y. X. Niu, F. Yang, G. L. Wang, W. W. Wang, D. P. Chen, J. F. Li, C. Zhao, and T. C. Ye, ECS J. Solid State Science and Techno., vol. 5, no. 6, pp. 315-319, 2016. Figure 1

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Low Specific Contact Resistivity to N-Ge and Well-Behaved Ge N(+)/P Diode Achieved by Implantation and Excimer Laser Annealing