Abstract:Abstract Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

In Situ Doped Phosphorus Diffusion Behavior in Germanium Epilayer on Silicon Substrate by Ultra-High Vacuum Chemical Vapor Deposition

Properties of N-Ge Epilayer on Si Substrate with In-Situ Doping Technology

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

In-situ Phosphorous-Doped SiGe Layer on Si Substrate by Reactive Thermal Chemical Vapor Deposition at Low Temperature

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

In Situ Phosphorus Doping of Si and Si<sub>1-x</sub>Ge<sub>x</sub> Epitaxial Layers by RTP/VLP-CVD

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Junction Control by Carbon and Phosphorus Co-Implantation in Pre-Amorphized Germanium

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

High Phosphorus Doping of Epitaxial Silicon at Low Temperature and Very Low Pressure

Phosphorus Diffusion and Activation in Fluorine Co-Implanted Germanium after Excimer Laser Annealing

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Spin-on Doping of Phosphorus on Ge with a 9 Nm Amorphous Si Capping Layer to Achieve N+/p Shallow Junctions Through Rapid Thermal Annealing

Low-Temperature Epitaxy of Phosphorus Doped Si and Si1-Xgex Films by Rtp/Vlp-Cvd

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process