Abstract:Amorphous indium gallium zinc oxide (IGZO) is the most suitable material choice for optoelectronic devices such as thin film transistor (TFT). However, usually, the physical properties of IGZO are of concern rather than the preparation process, which will complicate the control of the main properties of the material. To obtain a simple method of controlling IGZO properties, different proportions of mixed gases of oxygen and argon were added in the process of preparing thin films by pulsed laser deposition (PLD) for studying the fluence of atmosphere on the growth of IGZO. The structure and components of the film are characterized by X-ray diffraction (XRD), which confirmed the amorphous structure. A red-shift of the absorption peak in range of 450–850 nm was generated with the increase in argon concentration. Meanwhile, the transmission spectra showed that the transmittance of the material was lower than 80% in the range of 450–850 nm. Then, different target samples have a wide photoluminescence band at 200–800 nm. Oxygen vacancy defects were considered to be closely related to the photoluminescence behavior. The smallest surface roughness of the films prepared under 50% Ar and 50% O2 and the largest in 100% Ar are proved by atom force microstructure (AFM). Importantly, the greater difference in electrical properties reflects the sensitivity of different oxygen and argon concentrations to material effects. The carrier concentration can be adjusted from 1.08 × 1011 to 1.33 × 1016 by this method. Finally, the IGZO achieved in this work was used in a transistor, which reflected good diode characteristics.

Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Water Assisted Oxygen Absorption on the Instability of Amorphous InAlZnO Thin-Film Transistors

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Stability of Amorphous Indium–Tungsten Oxide Thin-Film Transistors under Various Wavelength Light Illumination

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

9.2: Mechanism of H<sub>2</sub>O‐induced Instability of Self‐Aligned Top‐Gate Amorphous InGaZnO TFTs

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure