Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene

High-Performance CVD Bernal-Stacked Bilayer Graphene Transistors for Amplifying and Mixing Signals at High Frequencies.

A Novel Graphene Double-Balanced Passive Mixer.

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

A Low-Supply-voltage High-Power-handling Stacked SPDT Switch Based on Feedforward Capacitors.

Double-Balanced Graphene Integrated Mixer with Outstanding Linearity.

Double-balanced Mixer Based on Monolayer Graphene Fieldeffect Transistors

A mixer architecture using GaN-based split-gate nanowire transistor

6–12 GHz MMIC Double-Balanced Upconversion Mixer Based on Graphene Diode

Short-Channel Graphene Mixer with High Linearity

High Performance Double-Gate Graphene Radio-Frequency Transistors

Performance Evaluation of Four-Wave Mixing in a Graphene-Covered Tapered Fiber

Device considerations and modeling for the design of an InP-based MODFET millimeter-wave resistive mixer with superior conversion efficiency

A 15-27 Ghz Low Conversion Loss And High Isolation Resistive Ring Mixer For Direct Conversion Receiver

Optimizing the fabrication process for high performance graphene field effect transistors.

Optoelectronic mixing with high-frequency graphene transistors

An Embedded Gate Graphene Field Effect Transistor with Natural Al Oxidization Dielectrics and Its Application to Frequency Doubler

Tunable 1/f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors.

Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer

Field-Plate Mixer

Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors