Abstract:As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention. To understand device physics in depth and to assess the performance limits of SNWTs, simulation is becoming increasingly important. The objectives of this work are: 1) to theoretically explore the essential physics of SNWTs (e.g., electrostatics, transport and band structure) by performing computer-based simulations, and 2) to assess the performance limits and scaling potentials of SNWTs and to address the SNWT design issues. The computer based simulations carried out are essentially based on DFT using NEGF formalism. A silicon nanowire has been modeled as PN diode (Zener Diode), PIN diode, PIP & NIN diode configurations by selectively doping the nanowire and simulated by biasing one end of the nanowire to ground and sweeping the other end of the nanowire from -1 V to 1 V to obtain the electrical characteristics of the respective diodes. In order to determine the effectiveness of the modeled diodes in silicon nanowire, the same diodes have been modeled using a germanium nanowire by selective doping and simulated in the same manner to obtain the electrical characteristics of the germanium nanowire based diodes which has been used as a reference to analyze the characteristics obtained using silicon nanowire. The modeled diodes are extremely small in dimension when compared to the conventional bulk silicon and germanium based diodes. This work is followed by modeling and simulation of a gate all around nanowire field effect transistor using two different gate dielectrics, followed by temperature dependence of the nanowire FET characteristics and the off state current and conductance variation using the two dielectrics.

Numerical Simulations of Diamond Cross-Section Germanium Nanowire Transistors for CMOS Compatible Assembly

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Comparative study of triangular-shaped silicon nanowire transistors

Comparative study of silicon nanowire transistors with triangular-shaped cross sections

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Performance studies in nanowire field-effect transistors with different cross sections

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

A Compact Model of Silicon-Based Nanowire Field Effect Transistor for Circuit Simulation and Design

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

High Performance Tri-gate Germanium-on-insulator Based Junctionless Nanowire Transistors

Leakage Current Of Germanium-On-Insulator-Based Junctionless Nanowire Transistors

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

Nanotube and Nanowire Transistors

Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors

DC and Analog/rf Comparisons of Si- and Ge- Nanowire Schottky Barrier Transistors

Ge Nanowire Transistors with High-Quality Interfaces by Atomic-Scale Thermal Annealing