Cascade-type Energy Band Design of a Black Phosphorus Photodetector with High Performance

Congya You,Guoqing Zhang,Wenjie Deng,Chen Zhao,Boxing An,Beiyun Liu,Bo Wang,Hui Yan,Danmin Liu,Yongzhe Zhang

DOI: https://doi.org/10.1039/c8tc05735d

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:A high performance hybrid black phosphorus/PbS QD photodetector with an additional junction through ligand-based energy band engineering.

What problem does this paper attempt to address?

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Hongtao Lin,Skylar Deckoff-Jones,Derek Kita,Hanyu Zheng,Duanhui Li,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1364/cleo_si.2018.sm2i.8

2018-01-01

Abstract:The first mid-infrared waveguide integrated black phosphorus photodetector was fabricated and characterized with a responsivity of 40 mA/W at 2185 nm wavelength. (C) 2018 Optical Society of America
Highly Efficient Photogenerated Electron Transfer at a Black Phosphorus/indium Selenide Heterostructure Interface from Ultrafast Dynamics

Xianghong Niu,Yunhai Li,Yehui Zhang,Qijing Zheng,Jin Zhao,Jinlan Wang

DOI: https://doi.org/10.1039/c8tc06208k

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Highly efficient photogenerated electron transfer at a black phosphorus/indium selenide heterostructure interface by an adiabatic mechanism.
High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Youtian Hu,Fan Yang,Jiamin Chen,Shijia Lu,Qinyu Zeng,Huangpu Han,Yujie Ma,Zhigang Zhao,Guangyue Chai,Bingxi Xiang,Shuangchen Ruan

DOI: https://doi.org/10.1364/OE.497756

2023-08-14

Abstract:We present a high-performance broadband (450-1550 nm) black phosphorus photodetector based on a thin-film lithium niobate waveguide. The waveguides are fabricated by the proton exchange method with flat surfaces, which reduces the stress and deformation of two-dimensional materials. At a wavelength of 1550 nm, the photodetector simultaneously achieves a high responsivity and wide bandwidth, with a responsivity as high as 147 A/W (at an optical power of 17 nW), a 3-dB bandwidth of 0.86 GHz, and a detectivity of 3.04 × 1013 Jones. Our photodetector exhibits one of the highest responsivity values among 2D material-integrated waveguide photodetectors.
Self-powered Photogalvanic Phosphorene Photodetectors with High Polarization Sensitivity and Suppressed Dark Current.

Shuaishuai Li,Tao Wang,Xiaoshuang Chen,Wei Lu,Yiqun Xie,Yibin Hu

DOI: https://doi.org/10.1039/c8nr00484f

IF: 6.7

2018-01-01

Nanoscale

Abstract:High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.
High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus

Xueying Zuo,Jingjing Cheng,Yulin Liang,Fuming Xu,Yanxia Xing

DOI: https://doi.org/10.1103/PhysRevApplied.20.024027

2023-08-13

Abstract:We numerically investigate the high-efficiency photovoltaic effect in lateral p-n homojunction based on monolayer black phosphorus (MBP) by using the non-equilibrium Green's function combined with the density functional theory. Due to the built-in electric field of the p-n junction and the wrinkle structure of MBP, the photocurrent excited by either linearly or elliptically polarized light is significantly enhanced in a wide photon energy range. Moreover, because of the electron-photon interaction, the photocurrent is related to atomic orbitals through the polarizing angle of polarized light. Therefore, we can read the orbital information of the band structure from the polarizing angular distribution of photocurrent. These findings suggest the promising application of MBP-based p-n homojunction in high-efficiency photoelectric devices and orbital-resolved photovoltaic detection.

Mesoscale and Nanoscale Physics
Self-powered photodetectors based on 0D/2D mixed dimensional heterojunction with black phosphorus quantum dots as hole accepters

Hui Qiao,Zhongjun Li,Zongyu Huang,Xiaohui Ren,Jianlong Kang,Meng Qiu,Yundan Liu,Xiang Qi,Jianxin Zhong,Han Zhang

DOI: https://doi.org/10.1016/j.apmt.2020.100765

IF: 8.663

2020-09-01

Applied Materials Today

Abstract:<h2 class="section-title u-h3 u-margin-l-top u-margin-xs-bottom">Abstact</h2><p>Two-dimensional (2D) materials exhibit outstanding performance and good application prospects in the field of photodetectors due to their excellent optical and electronic properties. However, weak light absorption capacity the rapid recombination of photogenerated electron-hole pairs is still a serious obstacle that limits their light detection performance. Black phosphorus (BP) can act as a hole acceptor due to its excellent hole mobility, which can induce the rapid transfer of photogenerated holes, and the heterojunction at the interface promotes the injection of photogenerated electrons onto the surface of MoS<sub>2</sub>, thereby effectively promoting the separation of photogenerated electron-hole pairs. In addition, recent reports indicate that quantum dots (QDs) have excellent local photon capture capabilities due to their quantum confinement and surface effects, which are considered to be excellent light absorbers that enhance the performance of photodetectors in 2D materials. Here, we prepared black phosphorus QDs-molybdenum disulfide (BP QDs-MoS<sub>2</sub>) heterojunction and constructed a photo-electrochemical-type (PEC-type) photodetector based on the heterojunction. Experimental results show that the BP QDs-MoS<sub>2</sub> heterojunction-based PEC-type photodetector exhibits significantly enhanced photo-response performance. Meanwhile, the PEC-type photodetector also exhibits self-powered photo-response behavior, good photoresponse performance and stability in a liquid environmentand. This work strongly proves that BP QDs are used as hole acceptors to promote the separation of photogenerated electron-hole pairs is an effective means.</p>

materials science, multidisciplinary
High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Chaoyue Liu,Jingshu Guo,Laiwen Yu,Yuluan Xiang,Hengtai Xiang,Jiang Li,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.2c00244

IF: 7

2022-01-01

ACS Photonics

Abstract:Two-dimensional materials have attracted muchinterest for realizing novel optoelectronic devices, e.g., photo-detectors. In this work, we demonstrate a high-performance black-phosphorus avalanche photodetector based on a silicon hybridplasmonic waveguide with double nanoslots, in which way the lightabsorption by black phosphorus is enhanced and the carrier transittime is reduced simultaneously. Benefiting from the avalanchemultiplication process in black phosphorus, the present waveguideavalanche photodetector exhibits high responsivities of 66 A/W(@optical power of 2.9 mu W) and 125 A/W (@optical power of 1.4 mu W) for the wavelength bands of 1.55 and 1.95 mu m, respectively.The measured 3 dB-bandwidth is 1.05 GHz, which is at least three orders of magnitude higher than those reported high-gainphotodetectors based on two-dimensional materials. The present high-performance silicon/BP waveguide avalanche photodetectorprovides a promising option toward the applications of optical sensing, optical imaging, and optical communications in thewavelength band of 1.55/1.95 mu m and even beyond.
Top-Gated Black Phosphorus Phototransistor For Sensitive Broadband Detection

Changlong Liu,Lin Wang,Xiaoshuang Chen,Jing Zhou,Weiwei Tang,Wanlong Guo,Jin Wang,Wei Lu

DOI: https://doi.org/10.1039/c7nr09545g

IF: 6.7

2018-01-01

Nanoscale

Abstract:The present work reports on a graphene-like material that is promising for photodetection applications due to its high optical absorption and layer-dependent properties. To date, only narrow-band photodetectors have been realized; therefore, extending the working wavelength is becoming more imperative for applications such as high-contrast imaging and remote sensing. In this work, we developed a novel detection technique that provides enhanced performance across the infrared and terahertz bands by using an antenna-assisted top-gated black phosphorus phototransistor. By using the proposed sophisticated design, the adverse effect due to the back-gate that is generally employed for a long-wavelength photon coupling can be eliminated. Moreover, the antenna-assisted near-field and dark current can be further tailored electromagnetically and electrostatically by employing a gate finger, thus resulting in improved detection efficiency. Various detection mechanisms such as thermoelectric, bolometric, and electronhole generation are differentiated on the basis of the device geometry and incident wavelength. The proposed photodetector demonstrated superior performance-excellent sensitivity of more than 10 V W-1, a noise equivalent power value of less than 0.1 nW Hz(-0.5), and a fast response time across disparate wavebands. Thus, the photodetector can satisfy diverse application requirements.
Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Yexin Deng,Zhe Luo,Nathan J. Conrad,Han Liu,Yongji Gong,Sina Najmaei,Pulickel M. Ajayan,Jun Lou,Xianfan Xu,Peide D. Ye

DOI: https://doi.org/10.1021/nn5027388

2014-07-13

Abstract:Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/Vs, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependence direct bandgap. However, p-n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate tunable p-n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p-n heterojunction. Upon illumination, these ultra-thin p-n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm, and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p-n diodes show promise for broadband photodetection and solar energy harvesting.

Mesoscale and Nanoscale Physics
Plasmonic Enhanced Polarization Sensitive Black Phosphorus Photodetection Device

Yexin Deng,Prabhu K. Venuthurumilli,Zhe Luo,Nathan Conrad,Xianfan Xu,Peide D. Ye

DOI: https://doi.org/10.1109/drc.2017.7999440

2017-01-01

Abstract:2D black phosphorus is good for use in photodetection devices due to its direct bandgap [1]. However, light absorptions in these 2D materials are often very low due to its ultra-thin nature. Numerical simulations were used to design and optimize the plasmonic structures. The optimized bowtie structure devices were fabricated on black phosphorus on transparent substrate. Photocurrent measurements showed strong light polarization dependence in our device (2 times difference), as well as stronger responsivity (6 times higher) compared with our previous work thanks to the enhanced light absorption by the plasmonic structure [2].
Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth

Qiang Li,Shibo Fang,Xingyue Yang,Zongmeng Yang,Qiuhui Li,Wenjing Zhou,Dahua Ren,Xiaotian Sun,Jing Lu

DOI: https://doi.org/10.1021/acsami.4c14392

IF: 9.5

2024-11-07

ACS Applied Materials & Interfaces

Abstract:Two-dimensional ferroelectric materials have emerged as a promising candidate for the development of next-generation photodetectors owing to their inherent photogalvanic effect (PGE) and strong light-matter interactions. Recently, the first-ever elemental-based ferroelectric material, black-phosphorus-like Bi (BP-Bi), has been successfully synthesized. In this work, we investigate the PGE of the monolayer (ML) BP-Bi by using ab initio quantum transport simulation. We find that the photocurrent...

materials science, multidisciplinary,nanoscience & nanotechnology
Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

Chunhui Lu,Mingwei Luo,Wen Dong,Yanqing Ge,Taotao Han,Yuqi Liu,Xinyi Xue,Nan Ma,Yuanyuan Huang,Yixuan Zhou,Xinlong Xu

DOI: https://doi.org/10.1002/advs.202205460

Abstract:Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi2 Te3 /Bi2 Se3 /Bi2 S3 is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W-1 at -0.1 V and 3.5 mAW-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 109 Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi2 Te3 /Bi2 Se3 /Bi2 S3 cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm-2 h-1 and ≈14.320 µmol cm-2 h-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.
Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts

Yexin Deng,Nathan J. Conrad,Zhe Luo,Han Liu,Xianfan Xu,Peide D. Ye

DOI: https://doi.org/10.48550/arXiv.1503.07392

2015-03-25

Materials Science

Abstract:The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher metal work functions lead to larger output hole currents in p-type transistors, while ambipolar characteristics can be observed with lower work function metals. Photodetectors with record high photoresponsivity (223 mA/W) are demonstrated on black phosphorus through contact-engineering.
High-Performance Hybrid InP QDs/Black Phosphorus Photodetector.

Mingyu Jeong,Yang-Soo Lee,Jong‐Soo Lee,P. Ramasamy,Dohyun Kwak

DOI: https://doi.org/10.1021/acsami.9b07910

2019-07-19

Abstract:0D-2D hybrid optoelectronic devices have demonstrated high sensitivity and high performance due to high absorption coefficient of 0D materials with a tunable detection range and high carrier transport property of 2D materials. However, the reported 0D-2D hybrid devices employ toxic nanomaterials as sensitizing layers, which can limit the practical applications. In this study, we first fabricated 0D-2D hybrid photodetector using non-toxic InP quantum dots (QDs) as a light-absorbing layer and black phosphorus (BP) as a transport layer. The surface treatment using 1, 2 ethanedithiol (EDT) and thermal treatment were carried out to remove the surface long ligands of colloidal QDs, which can accelerate the charge injection of the photo-generated carriers through the interfaces between InP QDs and BP. The InP QDs/BP hybrid photodetector demonstrates a high responsivity of 1×109 A/W and detectivity of 4.5×1016 Jones at 0.05 μW/cm2 under 405 nm illumination. The results show that 0D-2D hybrid photodetectors based on III-V semiconducting QD materials can be optimized for high-performance photodetectors.

Physics,Engineering,Medicine,Materials Science
Polarization-sensitive Broadband Photodetector Using a Black Phosphorus Vertical P–n Junction

Hongtao Yuan,Xiaoge Liu,Farzaneh Afshinmanesh,Wei Li,Gang Xu,Jie Sun,Biao Lian,Alberto G. Curto,Guojun Ye,Yasuyuki Hikita,Zhixun Shen,Shou-Cheng Zhang,Xianhui Chen,Mark Brongersma,Harold Y. Hwang,Yi Cui

DOI: https://doi.org/10.1038/nnano.2015.112

IF: 38.3

2015-01-01

Nature Nanotechnology

Abstract:The ability to detect light over a broad spectral range is central for practical optoelectronic applications, and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS2. However, polarization sensitivity within such a photodetector remains elusive. Here we demonstrate a linear-dichroic broadband photodetector with layered black phosphorus transistors, using the strong intrinsic linear dichroism arising from the in-plane optical anisotropy with respect to the atom-buckled direction, which is polarization sensitive over a broad bandwidth from 400 nm to 3750 nm. Especially, a perpendicular build-in electric field induced by gating in black phosphorus transistors can spatially separate the photo-generated electrons and holes in the channel, effectively reducing their recombination rate, and thus enhancing the efficiency and performance for linear dichroism photodetection. This provides new functionality using anisotropic layered black phosphorus, thereby enabling novel optical and optoelectronic device applications.
A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

Song Wang,Shuhua Yang,Zenglong Xu,Huiyan Xu,Guangbin Duan,Degang Zhao,Xiutong Wang,Bingqiang Cao

DOI: https://doi.org/10.1039/d4tc03359k

IF: 6.4

2024-11-20

Journal of Materials Chemistry C

Abstract:Perovskite quantum dot photodetectors have attracted significant attention due to their splendid electronic and optical properties. However, the nonradiative recombination in CsPbBr 3 quantum dot (QD) thin films is very severe, which limits their performance. To solve this problem, a ZnO/CsPbBr 3 quantum-dot-level-contact hybrid sandwich structure is designed, which enlarges the contact area between the ZnO quantum dot (QD) electron transport layer (ETL) and CsPbBr 3 QD absorption layer, promoting the charge separation efficiency and improving the photoelectric conversion efficiency. The photodetector based on the ZnO/CsPbBr 3 quantum-dot-level-contact hybrid sandwich structure exhibits a high on/off ratio of 1.52 × 10 3 , an enhanced responsivity of 79.5 mA W −1 , and a superior specific detectivity of 3.97 × 10 11 Jones. The quantum-dot-level-contact designed strategy for this photodetector may blaze a trail for high-efficiency optoelectronic devices.

materials science, multidisciplinary,physics, applied
All‐Inorganic CsPbBr 3 Perovskite Nanocrystals/2D Non‐Layered Cadmium Sulfide Selenide for High‐Performance Photodetectors by Energy Band Alignment Engineering

Mingfa Peng,Yulong Ma,Lei Zhang,Shan Cong,Xuekun Hong,Yiheng Gu,Yawei Kuang,Yushen Liu,Zhen Wen,Xuhui Sun

DOI: https://doi.org/10.1002/adfm.202105051

IF: 19

2021-07-20

Advanced Functional Materials

Abstract:Perovskites have attracted intensive attention as promising materials for the application in various optoelectronic devices due to their large light absorption coefficient, high carrier mobility, and long charge carrier diffusion length. However, the performance of the pure perovskite nanocrystals-based device is extremely restricted by the limited charge transport capability due to the existence of a large number of the grain boundary between perovskite nanocrystals. To address these issues, a high-performance photodetector based on all-inorganic CsPbBr3 perovskite nanocrystals/2D non-layered cadmium sulfide selenide heterostructure has been demonstrated through energy band engineering with designed typed-II heterostructure. The photodetector exhibits an ultra-high light-to-dark current ratio of 1.36 × 105, a high responsivity of 2.89 × 102 A W−1, a large detectivity of 1.28 × 1014 Jones, and the response/recovery time of 0.53s/0.62 s. The enhancement of the optoelectronic performance of the heterostructure photodetector is mainly attributed to the efficient charge carrier transfer ability between the all-inorganic CsPbBr3 perovskites and 2D cadmium sulfide selenide resulting from energy band alignment engineering. The charge carriers' transfer dynamics and the mechanism of the CsPbBr3 perovskites/2D non-layered nanosheets interfaces have also been studied by state-state PL spectra, fluorescence lifetime imaging microscopy, time-resolved photoluminescence spectroscopy, and Kelvin probe force microscopy measurements.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High‐Performance Photodetector Based on Bi 2 Se 3 /GeSe Heterojunction with Band Alignment Evolution

Yahui Li,Mengqi Che,Nan Zhang,Yuting Zou,Xingyu Zhao,Yucai Lin,Bingchen Lv,Xiaobao Ma,Yaru Shi,Jianjun Yang,Xiaojuan Sun,Shaojuan Li,Dabing Li

DOI: https://doi.org/10.1002/adom.202302339

IF: 9

2023-12-17

Advanced Optical Materials

Abstract:Abstract Band alignment engineering in 2D van der Waals heterostructures is a promising method for manufacturing high‐speed, high‐responsivity, and high‐gain photodetectors. Here, a heterojunction photodetector with the band alignment transition from type I to type II under the bias voltage using narrow bandgap material n‐Bi 2 Se 3 and polarization‐sensitive material p‐GeSe is designed and prepared. This photodetector possesses excellent performance of broadband detection (532‐1550 nm), high responsivity (5.86 × 10 3 A W −1 ), high detectivity (1.50 × 10 13 Jones), significant external quantum efficiency (1.15 × 10 6 %) and fast response time (97 μs). Compared with the conventional type II band alignment, an additional triangular potential barrier is generated in this type II band alignment evolved from type I. Notably, this triangular barrier will block photogenerated carriers in Bi 2 Se 3 , which leads to high external quantum efficiency; Furthermore, photogenerated holes can tunnel through this barrier, effectively shortening the response time. Meanwhile, the device can achieve polarization detection (anisotropic ratio = 1.74 at 808 nm) and polarization imaging, which is of great significance for reducing the bit error rate in complex environments.

materials science, multidisciplinary,optics
Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors.

Zihan Wang,Hui Zhang,Weike Wang,Chaoyang Tan,Jiawang Chen,Shiqi Yin,Hanlin Zhang,Ankang Zhu,Gang Li,Yuchen Du,Shaotian Wang,Fengguang Liu,Liang Li

DOI: https://doi.org/10.1021/acsami.2c08827

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:van der Waals (vdW) heterodiodes composed of two-dimensional (2D) layered materials led to a new prospect in photoelectron diodes and photovoltaic devices. Existing studies have shown that Type-I heterostructures have great potential to be used as photodetectors; however, the tunneling phenomena in Type-I heterostructures have not been fully revealed. Herein, a highly efficient nn+ WS2/PtS2 Type-I vdW heterostructure photodiode is constructed. The device shows an ultrahigh reverse rectification ratio of 105 owing to the transmission barrier-induced low reverse current. A unilateral depletion region is formed on WS2, which inhibits the recombination of carriers at the interface and makes the external quantum efficiency (EQE) of the device reach 67%. Due to the tunneling mechanism of the device, which allows the co-existence of a large photocurrent and a low dark current, this device achieves a light on/off ratio of over 105. In addition, this band design allows the device to maintain a high detectivity of 4.53 × 1010 Jones. Our work provides some new ideas for exploring new high-efficiency photodiodes.
Dual Mechanism WS2‐WSe2 Lateral Monolayer Heterojunction Photodetector and Its Photoresponse Enhancement by Hybridizing with CsPbBr3 QDs

Shuang Qiao,Jihong Liu,Ruining Wang,Linjuan Guo,Shufang Wang,Anlian Pan,Caofeng Pan

DOI: https://doi.org/10.1002/adom.202300751

IF: 9

2023-06-24

Advanced Optical Materials

Abstract:A high‐performance photodetector, capable of operating in both photovoltaic and photoconductive modes, has been developed using a lateral heterojunction of WS2‐WSe2. Further advancements have been made by incorporating CsPbBr3, with greatly enhanced responsivities, detectivities, and external quantum efficiencies, as well as reduced response times. Additionally, exceptional ambient stability has been achieved. Monolayer 2D lateral heterostructures with high interface qualities and well‐defined structures are particularly promising in novel electronic and optoelectronic applications. However, the photoelectric responses are still very low, and the working and modulating mechanisms urgently need exploration. Here, a lateral monolayer heterojunction of WS2‐WSe2 is successfully prepared with an atomically sharp interface and a band alignment of type‐II structure. Intriguingly, this heterojunction photodetector (PD) achieves outstanding characteristics of photocurrent generation in both photovoltaic and photoconductive modes with responsivities (Rs) of 60.2/3.0 A W−1, detectivities (D*s) of 1.81/0.98 × 1012 Jones, and response times of 32.2/28.5 and 39.5/32.1 ms, respectively. Moreover, all‐inorganic CsPbBr3 quantum dots are introduced to substantially promote the photoelectric responses. Because of the favorable band alignment and large absorption of the CsPbBr3, and efficient carrier transfer, the Rs and D*s are substantially improved to 1307/141.3 A W−1 and 1.16/2.94 × 1013 Jones, respectively, with fantastic external quantum efficiencies of 3.59/0.388 × 105% and also shortened response times of 12.5/13.2 and 17.4/15.8 ms. In addition, the ambient stability is remarkably enhanced. This study demonstrates that the combination of 2D lateral heterojunction with all‐inorganic perovskite may bring up promising opportunities for developing high‐performance PDs.

materials science, multidisciplinary,optics

Cascade-type Energy Band Design of a Black Phosphorus Photodetector with High Performance

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Highly Efficient Photogenerated Electron Transfer at a Black Phosphorus/indium Selenide Heterostructure Interface from Ultrafast Dynamics

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Self-powered Photogalvanic Phosphorene Photodetectors with High Polarization Sensitivity and Suppressed Dark Current.

High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus

Self-powered photodetectors based on 0D/2D mixed dimensional heterojunction with black phosphorus quantum dots as hole accepters

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Top-Gated Black Phosphorus Phototransistor For Sensitive Broadband Detection

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode

Plasmonic Enhanced Polarization Sensitive Black Phosphorus Photodetection Device

Photodetector Based on Elemental Ferroelectric Black Phosphorus-like Bismuth

Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts

High-Performance Hybrid InP QDs/Black Phosphorus Photodetector.

Polarization-sensitive Broadband Photodetector Using a Black Phosphorus Vertical P–n Junction

A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

All‐Inorganic CsPbBr 3 Perovskite Nanocrystals/2D Non‐Layered Cadmium Sulfide Selenide for High‐Performance Photodetectors by Energy Band Alignment Engineering

High‐Performance Photodetector Based on Bi 2 Se 3 /GeSe Heterojunction with Band Alignment Evolution

Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors.

Dual Mechanism WS2‐WSe2 Lateral Monolayer Heterojunction Photodetector and Its Photoresponse Enhancement by Hybridizing with CsPbBr3 QDs