Highly Efficient Photogenerated Electron Transfer at a Black Phosphorus/indium Selenide Heterostructure Interface from Ultrafast Dynamics

Xianghong Niu,Yunhai Li,Yehui Zhang,Qijing Zheng,Jin Zhao,Jinlan Wang

DOI: https://doi.org/10.1039/c8tc06208k

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Highly efficient photogenerated electron transfer at a black phosphorus/indium selenide heterostructure interface by an adiabatic mechanism.

What problem does this paper attempt to address?

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport.

Yanghua Lu,Sirui Feng,Runjiang Shen,Yujun Xu,Zhenzhen Hao,Yanfei Yan,Haonan Zheng,Xutao Yu,Qiuyue Gao,Panpan Zhang,Shisheng Lin

DOI: https://doi.org/10.34133/2019/5832382

IF: 11

2019-01-01

Research

Abstract:Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m(2), power density of 201.0 W/m(2), and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.
Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Yanghua Lu,Sirui Feng,Runjiang Shen,Yujun Xu,Zhenzhen Hao,Yanfei Yan,Haonan Zheng,Xutao Yu,Qiuyue Gao,Panpan Zhang,Shisheng Lin

DOI: https://doi.org/10.34133/2019/5832382

IF: 11

2020-01-01

Research

Abstract:Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m2, power density of 201.0 W/m2, and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.
Efficient Exciton Dissociation in Heterojunction Interfaces Realizing Enhanced Photoresponsive Performance

Wei Shao,Li Wang,Hui Wang,Zhi Zhao,Xiaodong Zhang,Shenlong Jiang,Shichuan Chen,Xianshun Sun,Qun Zhang,Yi Xie

DOI: https://doi.org/10.1021/acs.jpclett.9b01020

2019-01-01

Abstract:Excitonic effects, originating from the interactions between charge carriers, influence and even dominate the photoresponsive properties of low-dimensional materials. For efficient carrier-related photoresponse, it is imperative to develop appropriate strategies to promote exciton dissociation in these systems. Herein, by taking black phosphorus nanosheets/poly(3-hexylthiophene) (BP/P3HT) as a prototype, we propose that the construction of a heterojunction with a certain band alignment and transport property can facilitate exciton dissociation into free carriers. Analyses on band structures and carrier kinetics confirmed the directional injection of holes from BP to P3HT and the excellent transport property associated with the injected holes in P3HT. Benefiting from these features, the BP/P3HT heterojunction yielded a high photocurrent on-off ratio of ∼18.3, contrasting with the much lower values in pristine BP nanosheets and P3HT. This work provides a feasible scenario for exciton regulation via constructing a heterojunction and establishes an in-depth understanding of exciton dissociation in photoresponsive properties.
Highly Efficient Multiple Exciton Generation and Harvesting in Few-Layer Black Phosphorus and Heterostructure

Qiaohui Zhou,Hongzhi Zhou,Weijian Tao,Yizhen Zheng,Yuzhong Chen,Haiming Zhu

DOI: https://doi.org/10.1021/acs.nanolett.0c03328

2020-11-11

Abstract:Multiple exciton generation (MEG) in semiconductors that yields two or more excitons by absorbing one high-energy photon has been proposed to break the Shockley-Queisser limit and boost photon-to-electron conversion efficiency. However, MEG performance in conventional bulk semiconductors or later colloidal nanocrystals is far from satisfactory. Here, we report efficient MEG in few-layer black phosphorus (BP), a direct narrow bandgap two-dimensional (2D) semiconductor with layer-tunable properties. MEG performance improves with decreasing layer number and reaches 2.09Eg threshold and 93% efficiency for two-layer BP, approaching energy conservation limit. The enhanced MEG can be attributed to strong Coulomb interaction and high density of states in 2D materials. Furthermore, MEG of BP shows negligible degradation in vertical heterostructure and multielectron can be extracted by interfacial transfer with near unity yield. These results suggest 2D semiconductors as an ideal system for next generation highly efficient light emission and charge transfer devices.
Efficient Carrier Separation in Graphitic Zinc Oxide and Blue Phosphorus van der Waals Heterostructure

Xianghong Niu,Yunhai Li,Huabing Shu,Xiaojing Yao,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpcc.6b12613

2017-01-01

Abstract:Efficient carrier separation is the key to the application of photoelectric device. However, photogenerated electron hole pairs in simplex semiconductors generally occupy the same regions spatially and are easy to recombine. Here we design a graphitic zinc-oxide-based (g-ZnO) intrinsic type-II heterostructure, g-ZnO/blue phosphorus (BP), based on first-principles calculations. The type-II band offsets and large built-in electric field ensure the photogenerated electrons easily migrating from g-ZnO to BP, which significantly enhances the separation of electron-hole pairs. Improved optical absorption is also observed in the heterostructure. Furthermore, the perpendicular external electric field can greatly modulate band edges and achieve a direct band gap at Gamma point, which provides further promotion in the separation of carriers.
Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Siwen Zhao,Junchi Wu,Ke Jin,Huaiyi Ding,Taishen Li,Changzheng Wu,Nan Pan,Xiaoping Wang

DOI: https://doi.org/10.1002/adfm.201802011

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high‐performance electronic and optoelectronic devices. In this study, a vertical p–n diode is constructed by vertically stacking p‐type few‐layer black phosphorus (BP) on n‐type few‐layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate‐modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization‐sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero‐bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP‐based devices. The results pave the way for the implementation of p‐BP/n‐InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization‐sensitive applications.
Photo-oxidative Degradation and Protection Mechanism of Black Phosphorus: Insights from Ultrafast Dynamics.

Xianghong Niu,Yunhai Li,Yehui Zhang,Qiang Li,Qionghua Zhou,Jin Zhao,Jinlan Wang

DOI: https://doi.org/10.1021/acs.jpclett.8b02060

2018-01-01

Abstract:The environmental instability and protection of black phosphorus (BP) is one of the most attractive hotspots in two-dimensional materials. The generation of superoxide is believed to be the key culprit, while the photogenerated electron dynamics is yet to be known. In this work, we carry out time domain ab initio nonadiabatic molecular dynamics to understand the photogenerated electron dynamics at the molecule/BP interface. It is found that oxygen can trap the photogenerated electrons of BP rapidly owing to strong electron-phonon (e-p) coupling and becomes an active superoxide under light illumination. A good protection layer, such as perylene diimide (PDI), has comparable capabilities of trapping photogenerated electrons to oxygen, which can efficiently prevent the formation of superoxide and thus suppress the degradation of BP. Moreover, PDI can enhance the separation of photogenerated electron-hole pairs of BP by prolonging the time of holding photogenerated electrons of BP. In contrast, 7,7,8,8-tetracyano- p-quinodimethane (TCNQ) has weak e-p coupling and a large band edge offset between trapping and donor states and thereby poor trapping ability for photogenerated electrons, leading to poor protection efficiency. This study provides the first in-depth understanding of the BP degradation and protection mechanism from excited-state dynamics and can be applicable to other 2D photo-oxidative degradation.
Charge Transfer at the PTCDA/Black Phosphorus Interface

Can Wang,Dongmei Niu,Baoxing Liu,Shitan Wang,Xuhui Wei,Yuquan Liu,Haipeng Xie,Yongli Gao

DOI: https://doi.org/10.1021/acs.jpcc.7b06678

2017-01-01

Abstract:The interfacial electronic structure at the organic inorganic semiconductor interface plays an important role in determining the electrical and optical performance of organic-based devices. Here, we studied the molecular alignment and electronic structure of thermally deposited 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) molecules on cleaved black phosphorus using photoelectron spectroscopy. The work function of black phosphorus is substantially upped with an organic thin film, originating from the charge transfer from black phosphorus to PTCDA. According to our photoemission spectrum and theoretical simulation, we also define the interaction between PTCDA and black phosphorus as weak van de Waals physisorption, rather than bonding chemisorption. Furthermore, we show that PTCDA thin film can effectively isolate reactive oxygen species, thereby protecting BP surface oxidation and deterioration under ambient conditions. Our results suggest the possibility of manipulating interfacial electronic structures of black phosphorus interface by noncovalent with organic particular for applications in high-performance organic inorganic hybrid photovoltaic. semiconductor, in particular for applications in high-performance organic inorganic hybrid photovoltaic.
High‐Efficiency Photovoltaic Conversion at Selective Electron Tunneling Heterointerfaces

Chuancheng Jia,Wei Ma,Jianxin Guan,Chunhui Gu,Xinxi Li,Linan Meng,Yao Gong,Sheng Meng,Xuefeng Guo

DOI: https://doi.org/10.1002/aelm.201700211

IF: 6.2

2017-01-01

Advanced Electronic Materials

Abstract:Effectively controlling photoinduced charge transport at the heterointerface is of crucial importance for improving the performance of photovoltaic devices. On the basis of an ipsilateral selective electron tunneling (ISET) mechanism, here this study investigates photoinduced charge transport and photovoltaic conversion at a simplified dye/single-layer graphene (SLG)/TiO2 ternary interface. With an amphiphilic Z907 molecule as the model dye, the photoexcited electrons in the dye can directly tunnel across SLG and be collected by the TiO2 layer with an efficiency of 96.23%, which guarantees a high-efficiency photoelectric conversion at the ISET-based heterointerface. More importantly, the intrinsic Schottky barrier and fast hole collection rate at the heterointerface lead to a high photovoltage, a large fill factor, and the good intense-light performance for photovoltaic conversion. Such an ISET-based heterointerface may offer a platform of designing and developing a novel class of photovoltaic devices with high efficiency.
Phonon-induced Nonadiabatic and Adiabatic Mechanisms Synergistically Driving Ultrafast Interlayer Transfer of Photogenerated Charges in Heterostructures of G-C3n4 with MoTe2 and WTe2

Weibo Li,Xiao Tang,Yahui Zheng,Haidi Wang,Zhao Chen,Weiduo Zhu,Hongyan Lv,Chunhua Wang,Xiaofeng Liu,Haixiao Xiao,Xiao Cheng Zeng,Zhongjun Li

DOI: https://doi.org/10.1103/physrevb.110.165302

IF: 3.7

2024-01-01

Physical Review B

Abstract:Phonon vibration excitation is an effective approach to enhance photoelectric conversion efficiency of g-C3N4based heterostructures, yet the influencing mechanism on interlayer transfer of photogenerated charges remains unclear. Herein, we show first-principles evidence of using g-C3N4/ transition metal dichalcogenide (MoTe2 and WTe2) heterostructures to achieve ultrafast interlayer transfer of photogenerated electrons and holes at the timescales of 4 ps and 200 fs, respectively. Our findings reveal that the fast transfers of photogenerated electrons and holes are both promoted by a nonadiabatic (NA) mechanism, driven via the coupling of donor and acceptor electronic states with the same phonon state. Notably, this coupling in the valence bands is significantly stronger than that in the conduction bands, which enhances interface atom motion, reduces interface distance, and strengthens wave-function overlap of spatial localized electronic states, thereby synergistically producing much faster hole transfer. Moreover, the hole transfer is also enhanced by an adiabatic (AD) mechanism through phonon-induced crossing of valence bands. Our study identifies that the synergistic effects of phonon-induced NA and AD mechanisms play a key role in interlayer transfer of photogenerated charges within g-C3N4-based heterostructures.
Exciton‐Mediated Energy Transfer in Heterojunction Enables Infrared Light Photocatalysis

Yuanjin Li,Hui Wang,Xiaodong Zhang,Shuhui Wang,Sen Jin,Xiaoliang Xu,Wenxiu Liu,Zhi Zhao,Yi Xie

DOI: https://doi.org/10.1002/anie.202101090

2021-01-01

Angewandte Chemie

Abstract:Although a few semiconductors can directly absorb infrared light, their intrinsic properties like improper band-edge position and strong electron-hole interaction restrict further photocatalytic applications. Herein, we propose an exciton-mediated energy transfer strategy for realizing efficient infrared light response in heterostructures. Using black phosphorous/polymeric carbon nitride (BP/CN) heterojunction, CN could be indirectly excited by infrared light with the aid of nonradiatively exciton-based energy transfer from BP. At the same time, excitons are dissociated into free charge carriers at the interface of BP/CN heterojunction, followed by hole injection to BP and electron retainment in CN. As a result of these unique photoexcitation processes, BP/CN heterojunction exhibits promoted conversion rate and selectivity in amine-amine oxidative coupling reaction even under infrared light irradiation. This study opens a new way for the design of efficient infrared light activating photocatalysts.
Photoinduced Ultrafast Electron Transfer and Charge Transport in a PbI2/C60 Heterojunction

J. Leng,Shengye Jin,Chuanhui Cheng,Yuan Wang,Hang-Qi Song,Bi-Long Zhang,Wenming Tian,Chunyi Zhao,Weifeng Liu,S. Cong,Wen-hui Li,Junxue Liu

DOI: https://doi.org/10.1021/acs.jpcc.9b06247

2019-11-29

Abstract:Charge transport and electron transfer in the PbI2/C60 heterojunction were investigated. The charge carriers mobilities and trap densities of PbI2 were extracted from current-voltage characteristics of hole- and electron-only devices. Femtosecond transient absorption spectroscopy was used to elucidate the photophysical processes occurring in the heterojunction. For a pristine PbI2 film, trap-limited bimolecular recombination was dominated mechanism in case of low pump influence. We observed photoinduced ultrafast electron transfer from PbI2 to C60 with a rate constant of 0.45 ps−1. Semiclassical Marcus electron transfer theory was used to estimate electronic coupling between conduction band edge of PbI2 and lowest unoccupied molecular orbital of C60. We also fabricated a solar cell using the PbI2/C60 heterojunction. Electron transfer and charge extract efficiencies in our cell were also educed. The performance-limiting factors for solar cells based on PbI2 were discussed and a strategy to improve the devi...

Materials Science,Physics
High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus

Xueying Zuo,Jingjing Cheng,Yulin Liang,Fuming Xu,Yanxia Xing

DOI: https://doi.org/10.1103/PhysRevApplied.20.024027

2023-08-13

Abstract:We numerically investigate the high-efficiency photovoltaic effect in lateral p-n homojunction based on monolayer black phosphorus (MBP) by using the non-equilibrium Green's function combined with the density functional theory. Due to the built-in electric field of the p-n junction and the wrinkle structure of MBP, the photocurrent excited by either linearly or elliptically polarized light is significantly enhanced in a wide photon energy range. Moreover, because of the electron-photon interaction, the photocurrent is related to atomic orbitals through the polarizing angle of polarized light. Therefore, we can read the orbital information of the band structure from the polarizing angular distribution of photocurrent. These findings suggest the promising application of MBP-based p-n homojunction in high-efficiency photoelectric devices and orbital-resolved photovoltaic detection.

Mesoscale and Nanoscale Physics
Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Jialin Li,Lizhen Wang,Yuzhong Chen,Yujie Li,Haiming Zhu,Linjun Li,Limin Tong1

DOI: https://doi.org/10.3390/nano13010147

2023-05-11

Abstract:Interface interactions in 2D vertically stacked heterostructures play an important role in optoe-lectronic applications, photodetectors based on graphene/InSe heterostructures had shown promising performance nowadays. However, nonlinear optical properties studies based on the graphene/InSe heterostructure was insufficient. Here, we fabricated graphene/InSe heterostruc-ture by mechanical exfoliation, and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface is confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by built-in electric potential (~ 286 meV) and broadband nonlinear absorption, the application of graphene/InSe heterostruc-ture in mode-locked laser is realized. Our work not only provides a deeper understanding for the dipole orientation related interface interactions on the photoexcited charge transfer of gra-phene/InSe heterostructure, but also enrich the saturable absorber family for ultrafast photon-ics application.

Optics,Mesoscale and Nanoscale Physics
High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

Chuancheng Jia,Wei Ma,Chunhui Gu,Hongliang Chen,Haomiao Yu,Xinxi Li,Fan Zhang,Lin Gu,Andong Xia,Xiaoyuan Hou,Sheng Meng,Xuefeng Guo

DOI: https://doi.org/10.1021/acs.nanolett.6b00727

IF: 10.8

2016-01-01

Nano Letters

Abstract:A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.
Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure

Zhonghui Nie,Yuhan Wang,Ziling Li,Yue Sun,Xiaoping Liu,Edmond Turcu,Yi Shi,Rong Zhang,Yu Ye,Yongbing Xu,Fengqiu Wang

DOI: https://doi.org/10.48550/arXiv.1811.04706

2018-11-12

Abstract:Van der Waals (vdW) heterostructures constructed with two-dimensional (2D) materials have attracted great interests, due to their fascinating properties and potential for novel applications. While earlier efforts have advanced the understanding of the ultrafast cross-layer charge transfer process in 2D heterostructures, mechanisms for the interfacial photocarrier recombination remain, to a large extent, unclear. Here, we investigate a heterostructure comprised of black phosphorus (BP) and molybdenum disulfide (MoS2), with a type-II band alignment. Interestingly, it is found that the photo-generated electrons in MoS2 (transferred from BP) exhibit an ultrafast lifetime of about 5 ps, significantly shorter than those of the constituent materials. By corroborating with the relaxation of photo-excited holes in BP, it is revealed that the ultrafast time constant is as a result of efficient Langevin recombination, where the high hole mobility of BP facilitates a large recombination coefficient (approximately 2x10^-10 m^2/s). In addition, broadband transient absorption spectroscopy confirms that the hot electrons transferred to MoS2 distribute over a broad energy range following an ultrafast thermalization. The rate of the interlayer Langevin recombination is found to exhibit no energy level dependence. Our findings provide essential insights into the fundamental photo-physics in type-II 2D heterostructures, and also provide useful guidelines for customizing photocarrier lifetimes of BP for high-speed photo-sensitive devices.

Mesoscale and Nanoscale Physics
Revealing Charge-Transfer Dynamics at Buried Charge-Selective Heterointerface in Highly Effective Perovskite Solar Cells

Di Li,Shaobing Xiong,Bo Peng,Weimin Liu,Bo Li,Qinye Bao

DOI: https://doi.org/10.1021/acs.jpclett.3c02138

2023-08-31

Abstract:The suboptimal carrier dynamics at the heterointerface between the perovskite and charge transport layer severely limit further performance enhancement of the state-of-the-art perovskite solar cells (PSCs). Herein, we completely map charge carrier extraction and recombination kinetics over a broad time range at buried electron-selective heterointerfaces via ultrafast transient technologies. It is revealed that the heterointerfaces carefully contain the electronic processes of free charge...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Exploring a high-carrier-mobility black phosphorus/MoSe2 heterostructure for high-efficiency thin film solar cells

Guoqing Wang,Zongmei Guo,Chen Chen,Weili Yu,Bo Xu,Bin Lin

DOI: https://doi.org/10.1016/j.solener.2022.03.008

IF: 7.188

2022-04-01

Solar Energy

Abstract:Transition metal dichalcogenides (TMDCs) with self-passivated surfaces, suitable bandgaps and high optical-absorption coefficients are very promising for thin film solar cells, but seriously hindered by low carrier mobility. Herein, we propose interface-engineered two-dimensional van der Waals heterostructure composed of high-carrier-mobility black phosphorus (BP) layer and MoSe2 layer, and demonstrate a new-type BP/MoSe2 heterostructure thin film solar cell with high efficiency. The electronic structure and optical properties of both BP/MoSe2 and BP/MoS2 heterostructures are systematically investigated. Compared with BP/MoS2 heterostructure, BP/MoSe2 heterostructure shows enhanced photoelectric characteristics. Additionally, BP/MoSe2 heterostructure has greater light absorption intensity as well as a wider absorption range, achieving a much higher power conversion efficiency of up to 23.04%. It is found that the built-in electric field at the interface of BP/MoSe2 heterostructure accelerates the separation of electron-hole pairs. This work provides a feasible strategy for using the BP/MoSe2 heterostructure for next-generation high-specific-power thin film solar cells.

energy & fuels
Two-dimensional Black Phosphorous Induced Exciton Dissociation Efficiency Enhancement for High-Performance All-Inorganic CsPbI3 Perovskite Photovoltaics

Bo Li,Yanan Zhang,Lin Fu,Luyuan Zhang,Zhongyuan Liu,Longwei Yin

DOI: https://doi.org/10.1039/c9ta06016b

IF: 11.9

2019-01-01

Journal of Materials Chemistry A

Abstract:Owing to their prominent thermal stability, inorganic halide perovskites have been deemed as promising substitutes for organic-inorganic hybrid perovskites; however, their application is hindered by their mediocre efficiency. High exciton binding energies in inorganic perovskites have been considered to be one of the main obstacles, which lead to insufficient separation of bound excitons and low photocurrent output. Herein, we demonstrated an effective strategy to enhance the exciton dissociation efficiency in inorganic perovskites by incorporating layer-structure-tunable two-dimensional black phosphorous. Importantly, the energy-level configuration and work function alignment of multi-layer black phosphorous can be tuned by adjusting the number of layers, which induces built-in electric field formation and boosts interfacial charge carrier transfer. Furthermore, it is revealed that multi-layer black phosphorous can increase relative permittivity due to its efficient dielectric screening effect in a local dielectric environment, thus diminishing the exciton binding energy, enhancing the exciton dissociation efficiency and leading to a significant increase in the free carrier density of inorganic perovskites. The multi-layer black phosphorous-CsPbI3 heterostructure perovskite solar cells (PSCs) with the inorganic CuSCN hole-transport-layer (HTL) exhibit the current density of 19.3 mA cm(-2) and the power conversion efficiency (PCE) of 14.17%, which is one of the highest efficiencies reported to date for PSCs with all-inorganic materials.
Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation

shaofeng ge,chaokai li,zhimin zhang,chenlong zhang,yudao zhang,jun qiu,qinsheng wang,junku liu,shuang jia,ji feng,dong sun

DOI: https://doi.org/10.1021/acs.nanolett.5b01409

IF: 10.8

2015-01-01

Nano Letters

Abstract:Black phosphorus' has recently emerged as a promising material for high-performance electronic and optoelectronic device for its high mobility, tunable mid-infrared bandgap, and anisotropic electronic properties. Dynamical evolution of photoexcited carriers and the induced transient change of electronic properties are critical for materials' high-field performance but remain to be explored for black phosphorus. In this work, we perform angle-resolved transient reflection spectroscopy to study the dynamical evolution of anisotropic properties of black phosphorus under photoexcitation. We find that the anisotropy of reflectivity is enhanced in the pump-induced quasi-equilibrium state, suggesting an extraordinary enhancement of the anisotropy in dynamical conductivity in hot carrier dominated regime. These results raise attractive possibilities of creating high-field, angle-sensitive electronic, optoelectronic, and remote sensing devices exploiting the dynamical electronic anisotropy with black phosphorus.

Highly Efficient Photogenerated Electron Transfer at a Black Phosphorus/indium Selenide Heterostructure Interface from Ultrafast Dynamics

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport.

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Efficient Exciton Dissociation in Heterojunction Interfaces Realizing Enhanced Photoresponsive Performance

Highly Efficient Multiple Exciton Generation and Harvesting in Few-Layer Black Phosphorus and Heterostructure

Efficient Carrier Separation in Graphitic Zinc Oxide and Blue Phosphorus van der Waals Heterostructure

Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Photo-oxidative Degradation and Protection Mechanism of Black Phosphorus: Insights from Ultrafast Dynamics.

Charge Transfer at the PTCDA/Black Phosphorus Interface

High‐Efficiency Photovoltaic Conversion at Selective Electron Tunneling Heterointerfaces

Phonon-induced Nonadiabatic and Adiabatic Mechanisms Synergistically Driving Ultrafast Interlayer Transfer of Photogenerated Charges in Heterostructures of G-C3n4 with MoTe2 and WTe2

Exciton‐Mediated Energy Transfer in Heterojunction Enables Infrared Light Photocatalysis

Photoinduced Ultrafast Electron Transfer and Charge Transport in a PbI2/C60 Heterojunction

High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

Ultrafast photocarrier recombination dynamics in black phosphorus-molybdenum disulfide (BP/MoS2) heterostructure

Revealing Charge-Transfer Dynamics at Buried Charge-Selective Heterointerface in Highly Effective Perovskite Solar Cells

Exploring a high-carrier-mobility black phosphorus/MoSe2 heterostructure for high-efficiency thin film solar cells

Two-dimensional Black Phosphorous Induced Exciton Dissociation Efficiency Enhancement for High-Performance All-Inorganic CsPbI3 Perovskite Photovoltaics

Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation