Abstract:Thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have become essential building blocks for a broad range of electronics, since TAOSs facilitate large‐scale fabrication at moderate temperatures and hence feature compatibility with flexible substrates. An emerging indium‐free alternative to the widely commercially exploited indium gallium zinc oxide (IGZO) is amorphous zinc tin oxide (ZTO); however, according to previous reports, achieving acceptable performance of ZTO‐based devices fabricated at temperatures below 300 °C is still challenging to date. Here, key properties of the first all‐oxide and fully transparent metal‐semiconductor field‐effect transistors (MESFETs), metal‐insulator‐semiconductor field‐effect transistors (MISFETs) and junction field‐effect transistors (JFETs) based on amorphous ZTO are compared, employing PtOx, HfOy, and p‐type NiO as gate, respectively. All individual layers have been deposited exclusively at room temperature and do not require any additional postdeposition annealing to obtain sufficient device functionality. Demonstrated TFTs exhibit reasonable current on/off ratios of over six orders of magnitude with subthreshold swings as low as 61 mV dec–1 at room temperature. Transistor characteristics have been recorded for several weeks to study performance consistency over time and are further investigated regarding their stability under bias stress.

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Performance of Thin-Film Transistors with Ultrathin Ni-MILC Polycrystalline Silicon Channel Layers

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

High-performance transparent AZO TFTs fabricated on glass substrate

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High-performance Ti-doped zinc oxide TFTs with double-layer gate dielectric fabricated at low temperature

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature