Abstract:In this work, both the first principles calculations and molecular dynamics simulations are adopted to investigate the formation ability of various intrinsic point defects in 4H-SiC as well as the electronic band structure changes and the swelling effects caused by them. Our results demonstrate that the classical MEAM potential has an unsatisfactory performance on the defect formation energies as compared with the ab initio calculations based on the advanced SCAN functional, but provides a reasonable description on the volumetric swelling caused by single point defect. Both the SCAN and MEAM calculations indicate that the VC monovacancy and the CSi antisite defect will cause the lattice shrinkage, while the VSi monovacancy, the SiC antisite, the IC and the ISi interstitials will induce the volumetric swelling. Besides that, first principles calculations reveal that monovacancies and interstitials would induce defective electronic states near the Fermi level, while antisites have negligible influence on the electronic band structures as compared with the pristine case. Furthermore, the molecular statics relaxations are employed to explore the influence of point defect densities on the swelling behaviors of 4H-SiC, which reveals that the volume swelling ratios present good linear relationships with the increased density of the VC monovacancy, CSi antisite, SiC antisite and IC interstitial defects, but express complex non-linear tendencies with the VSi monovacancy and ISi interstitial defects. Therefore, our research deepens the understanding of the point defects' effects on the electronic properties and swelling behaviors of 4H-SiC.

Study of a new type nominal “washboard-like” triangular defects in 4H-SiC 4° off-axis (0 0 0 1) Si-face homoepitaxial layers

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Reduction of Morphological Defects in 4H-Sic Epitaxial Layers

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

Formation Mechanism of Two Types of Polytype Transformation in off-axis 4H-SiC Boules

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Study of deformation mechanism of structural anisotropy in 4H–SiC film by nanoindentation

The influence of intrinsic point defects on the electronic band structures and swelling behaviors of 4H-SiC

Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

Study of SiC Surface Defects on Sapphire/nitride Compound Substrates

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Extended study of the atomic step-terrace structure on hexagonal SiC (0 0 0 1) by chemical-mechanical planarization