Abstract:Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.

Direct Growth of 5 In. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

High-Crystallinity and High-Temperature Stability of the Hexagonal Boron Nitride Film Grown on Sapphire

Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Toward High-Power-density Laser-Driven Lighting: Enhancing Heat Dissipation in Phosphor-in-glass Film by Introducing H-Bn.

Direct Growth of Graphene on Vertically Standing Glass by a Metal-Free Chemical Vapor Deposition Method

Unidirectional domain growth of hexagonal boron nitride thin films

Growth of Diamond Thin Films with Smooth Surface and High Transmittance on Quartz Glass Substrates

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

Facile Synthesis and Characterization of Hexagonal Boron Nitride Nanoplates by Two‐Step Route

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Direct Growth of Multi‐Layer Graphene on Quartz Glass for High‐Performance Broadband Neutral Density Filter Applications

Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics

Boron Nitride Phosphide Thin Films Grown on Quartz Substrate by Hot-Filament and Plasma-Assisted Chemical Vapor Deposition

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy

Protection of boron nitride nanosheets by atomic layer deposition toward thermal energy management applications

Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Covalent Heteroepitaxy of Large‐Area Vertical Hexagonal Boron Nitride for High‐Temperature VUV Photodetectors