Abstract:The quality of GaN epitaxial films on Si substrates is significantly improved by employing a low-temperature AlN interlayer. The relationship between the AlN interlayer growth temperature and the quality of GaN epitaxial films is systematically investigated. As the AlN interlayer growth temperature increases from 700 to 1000 degrees C, the crystalline quality of the GaN epitaxial films is firstly improved and then deteriorated. The GaN epitaxial film with the AlN interlayer grown at 800 degrees C shows the best crystalline quality, which is characterized by X-ray rocking curves with minimum full-width at half-maximum values of 370 and 452 arcsec for GaN (0002) and GaN (10-12), respectively. Further investigation reveals the fact that the low growth temperature of the AlN interlayer weakens the diffusion of Ga atoms from the AlGaN buffer layer into the AlN interlayer, thereby maintaining the lattice mismatch between the AlN interlayer and the GaN layer. The lattice mismatch facilitates the growth of 3-dimensional GaN which reduces the dislocation density effectively. This work provides a significant insight into the growth mechanism of GaN epitaxial films on Si substrates, which is critical for the fabrication of GaN-based devices on Si substrates.

Influence of Hydrogen Impurity on the Resistivity of Low Temperature Grown P-Alxga1-xn Layer (0.08 ≤ X ≤ 0.104)

Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Green Laser Diodes with Low Operation Voltage Obtained by Suppressing Carbon Impurity in AlGaN: Mg Cladding Layer

Conductivity Enhancement in AlGaN:Mg by Suppressing the Incorporation of Carbon Impurity

Investigation On The Compensation Effect Of Residual Carbon Impurities In Low Temperature Grown Mg Doped Gan Films

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

High conductivity and low activation energy in p-type AlGaN

Influence of A Deep-Level-Defect Band Formed in A Heavily Mg-Doped Gan Contact Layer on the Ni/Au Contact to P-Gan

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Doping and compensation in heavily Mg doped Al-rich AlGaN films

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Influence of Al Content on Electrical and Structural Properties of Si-Doped Alxga1-Xn/Gan Hemt Structures

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface