Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films
Kai Chen,Jianguo Zhao,Yu Ding,Wenxiao Hu,Bin Liu,Tao,Zhe Zhuang,Yu Yan,Zili Xie,Jianhua Chang,Rong Zhang,Youliao Zheng
DOI: https://doi.org/10.1088/1674-1056/acdc0b
2024-01-01
Chinese Physics B
Abstract:Nonpolar (11-20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal-organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3 x 10(18) cm(-3), a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 degree celsius. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.