Process Effects on Leakage Current of Si‐PIN Neutron Detectors with Porous Microstructure

Baoning Yu,Kangkang Zhao,Taotao Yang,Yong Jiang,Xiaoqiang Fan,Min Lu,Jun Han
DOI: https://doi.org/10.1002/pssa.201600900
2017-01-01
physica status solidi (a)
Abstract:Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si‐PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross‐section morphology and current–voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm −2 at a bias of −20 V is obtained. A preliminary neutron irradiation test with 252 Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones.
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